Nanostructure of Technology for Making Photonic Crystals

光子晶体制造技术的纳米结构

• 批准号: 9912039
• 负责人: Axel Scherer
• 金额: $ 27万
• 依托单位: California Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-01 至 2004-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9912039&HistoricalAwards=false
• 关键词: Nanostructure; Technology; Making; Photonic; Crystals

The past rapid emergence of optical microcavity devices, such as Vertical Cavity Surface Emitting Lasers (VCSELs) [1] can be largely attributed to the high precision over the layer thickness control available during semiconductor crystal growth. High reflectivity mirrors can be grown with sub-nanometer accuracy to define high=Q cavities in the vertical dimension. Recently, it has also become possible to microfabricate high reflecti-vity mirrors by creating two- and three-dimensional periodic structures. These periodic "photonic crystals" can be designed to open up frequency bands within which the propagation of electromagnetic waves is forbidden irrespective of the propagation direction in space and define photonic bandgaps [2,3]. When combined with high index contrast slabs in which light can be efficiently guided, microfaricated two-dimensional photonic badgap mirrors provide us wit the geometries needed to confine light into extremely small volumes [4,5]. 2-D Fabry-Perot resonators wit hmicrofabricated mirrors are formed when defects are introduced into the photonic bandgap structure. It is then possible to tune these cavities lithographically by changing the precise geometry of the microstructures surrounding the defects. Surprisingly, we have found that small cavities consisting of single defects in a two-dimensional photonic bandgap crystal can still exhibit high Q values, and we have calculated, by finite-difference time-domain (FDTD) modeling, Qs in the range of 25,000 [6]. When real cavities are measured in absorbing semiconductor material, Q values ain excell of 1500 are measured. We have shown, as part of our previous NSF contract, that these high Qs make it now possible to define microcavity lasers [7] which functio at room temperature [8], with mode volumes as small as 2.5 (l/2nslab)3, or 0.03 um3 in InGaAsP emitting at 1.55 um.

光学微腔内的过去快速出现，例如垂直腔表面发射激光器（VCSELS）[1]可以主要归因于半导体晶体生长期间可用的层厚度控制的高精度。 高反射率镜可以以子纳米计精度生长，以在垂直尺寸中定义高= Q腔。 最近，通过创建二维和三维的周期性结构，也有可能微生物高反射式镜子。 这些周期性的“光子晶体”可以设计为打开频带，在该频带中，无论在空间中的传播方向并定义光子带盖，电磁波的传播都被禁止。 当将光有效地引导光的高指数对比板结合使用时，微构化的二维光子badgap镜子为我们提供了将光限制在极小体积中所需的几何形状[4,5]。 当将缺陷引入光子带隙结构时，形成了二维Fabry-Perot谐振器。 然后，可以通过更改围绕缺陷的微观结构的精确几何形状来调整这些空腔光刻。 令人惊讶的是，我们发现在二维光子带隙晶体中由单个缺陷组成的小腔仍然可以表现出较高的Q值，并且我们通过有限差分时间域（FDTD）建模，QS在25,000的范围内计算出[6]。 当实际空腔在吸收半导体材料中测量时，测量了Q值AIN Excell 1500。 我们已经显示，作为我们以前的NSF合同的一部分，这些高QS现在可以定义微腔激光器[7] [7]，该激光器在室温下起作用[8]，模式量小至2.5（L/2NSLAB）3，或INGAASP在1.55 um中发射为1.55 um。