Japan JSPS Program: Novel Single Electron Coulomb Blockade Transistor as a Proble in the Study of Si02/Si Interface

日本JSPS计划：新型单电子库仑封锁晶体管作为Si02/Si界面研究中的问题

• 批准号: 9813040
• 负责人: Bruce Hinds
• 金额: $ 0.55万
• 依托单位: Fellowships
• 依托单位国家: 美国
• 项目类别: Fellowship Award
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-06-01 至 2000-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9813040&HistoricalAwards=false
• 关键词: Japan; JSPS; Program; Novel; Single

Hinds 9724743 This award supports a 24 month Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Dr. Bruce Hinds at the Tokyo Institute of Technology, Tokyo, Japan. Dr. Hinds will work with Dr. Shunri Oda, Professor at the Research Center of Quantum Effect Electronics, on a research project entitled, "Novel Single Electron Coulomb Blockade Transistor as Probe in the Study of the SiO2/Si Interface." The proposed research will focus on the design of a single electron Coulomb blockade transistor and will be specifically directed toward lower gate control voltages (required for logic applications) and systematic control of interfacial oxides. Current research on Coulomb blockade transistors suggests that the charge of a single electron (in a floating gate) controls the state of the transistor (the flow of electrons through the channel). The proposed research will examine a novel transistor design that will allow for variations in interfacial oxides (SiO2/Si) present at the floating gate, modify the flow of electrons through the channel, and lower the control voltages that determine the efficacy of logic operations. Anticipated results of the research is the effective utilization of lithography with feature sizes near 10 nanometers, representing a significant advance in the scaling down of electronic device structures. The results of the proposed research will be critical to the advancement of nano-scale electronics and the conventional metal oxide semiconductor (MOS) fabrication, which is the basis of the present microelectronics industry. ***

Hinds 9724743 该奖项为日本东京工业大学的 Bruce Hinds 博士提供为期 24 个月的日本学术振兴会 (JSPS) 博士后奖学金。 Hinds 博士将与量子效应电子学研究中心教授 Shunri Oda 博士合作开展一项名为“新型单电子库仑阻塞晶体管作为 SiO2/Si 界面研究中的探针”的研究项目。 拟议的研究将集中于单电子库仑封锁晶体管的设计，并将专门针对较低的栅极控制电压（逻辑应用所需）和界面氧化物的系统控制。 目前对库仑封锁晶体管的研究表明，单个电子（在浮栅中）的电荷控制晶体管的状态（电子通过沟道的流动）。 拟议的研究将检查一种新颖的晶体管设计，该设计将允许浮栅处存在的界面氧化物（SiO2/Si）发生变化，改变通过沟道的电子流，并降低决定逻辑操作效率的控制电压。 该研究的预期结果是有效利用特征尺寸接近10纳米的光刻技术，代表着电子器件结构缩小方面的重大进步。 所提出的研究结果对于纳米级电子学和传统金属氧化物半导体（MOS）制造的进步至关重要，这是当前微电子工业的基础。 ***