Acquisition of an Ultra-High Vacuum System for the Physical Vapor Deposition of Thin Conducting Films

购置用于导电薄膜物理气相沉积的超高真空系统

• 批准号: 9802917
• 负责人: Lisa Porter
• 金额: $ 11.1万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-05-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9802917&HistoricalAwards=false
• 关键词: Acquisition; Ultra; Vacuum; System; Physical; Acquisition; Ultra; Vacuum; System; Physical

9802917 Porter This award provides support for the acquisition of an ultra-high vacuum system with the capability of multiple techniques for the controlled deposition of many types of thin conducting films. The deposition system will have a rare combination of techniques and attributes that will allow for the growth of a variety of conducting films, ranging from ultra-pure elements to refractory compounds, in a highly controlled environment. This system will permit leading research involving studies of the physics and electrical, chemical, and microstructural properties of materials at conducting-to-semiconducting interfaces. Some of the existing and planned research programs include an NSF-supported study of thermally stable contacts to SiC and GaN for high temperature electronic applications and the development of contacts for both SiC-based solar probes and SiC-, GaN-, or BN-based radio isotope batteries. Additional programs that will benefit include "Surface Phase Transitions in Alloys", "Stability of Fine Microstructures in Thin Films", and the "Mesoscale Interface Mapping Project". %%% While all of these research programs involve the fabrication of conducting contacts on semiconducting or insulating substrates, the nature of conducting films varies in terms of the techniques which are most appropriate for depositing the films. The system addresses these differences in its inclusion of two sources for dc sputtering, a multi-pocket electron-beam source for evaporation, and the future capability for the addition of an ion source for ion-beam assisted deposition. The sputtering and evaporation techniques will allow for easier deposition of most types of the films which are being studied, while the ion- assisted process will be used in the future to introduce more control over the parameters for depositing compound materials. ***

9802917 Porter该奖项为获得超高真空系统提供了支持，具有多种技术的能力来控制许多类型的薄导膜。 沉积系统将具有罕见的技术和属性组合，这些技术将允许在高度控制的环境中的各种导电膜的增长，从超质元素到难治化合物。 该系统将允许研究材料在传导至征收界面时的物理，化学和微观结构特性的研究。 一些现有的和计划的研究计划包括对与SIC和GAN的热稳定接触进行高温电子应用的研究以及基于SIC的太阳能探针以及基于SIC，GAN-或BN基于BN的无线电同位素电池的触点的研究。 将受益的其他程序包括“合金中的表面相变”，“薄膜中细微观结构的稳定性”和“中尺度接口映射项目”。 %%%虽然所有这些研究计划都涉及在半导体或绝缘基板上进行触点的制造，但传导膜的性质在最适合沉积膜的技术方面有所不同。 该系统在包含两个用于DC溅射的来源的差异中解决了这些差异，一个多口袋的电子束来源以及添加离子梁辅助沉积的离子源的未来能力。 溅射和蒸发技术将使正在研究的大多数类型的膜更容易地沉积，而将来将使用离子辅助过程来对沉积复合材料的参数进行更多控制。 ***