Measurements and Modeling of Noise in Next Generation Sub-Micron MOSFETs

下一代亚微米 MOSFET 中的噪声测量和建模

• 批准号: 9732663
• 负责人: Zeynep Celik-Butler
• 金额: $ 13.71万
• 依托单位: Southern Methodist University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-06-01 至 2001-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9732663&HistoricalAwards=false
• 关键词: Measurements; Modeling; Noise; Next; Generation

9732663Celik-BulterThe Semiconducting Research Corporation (SRC) has identified noise modeling of sub-micron Metal Oxide-Semiconductor Field-Effect Transistors (MOSFETs) as one of most urgent short term research needs for 1997-98. As devices shrink, frequencies increase, and voltages reduce, the need to understand the noise sources in new generation MOSFETs becomes more and more important in order to design and gavricate devices with acceptable performance characteristics. Noise models developed for large area devices based on the large-number-the device, beyond a certain limit of scaling down, with existing models, it becomes impossible to predict the noise performance of an individual transistor, specifically a MOSFET. The lack of accurate models leads the process and to significant waste of valuable time. There is a need to measure and understand the sources of noise(all kinds and wide frequency range) exhibited by deep-submicron MOSFETs.***

9732663 celcelik-bulterthemiconducting Research Corporation（SRC）已确定了亚微米金属氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物野外晶体管（MOSFET）的噪声模型是1997 - 98年最紧迫的短期研究需求之一。 随着设备缩小，频率的增加和电压的降低，了解新一代MOSFET中的噪声源的需求变得越来越重要，以设计和具有可接受性能特征的设备。 基于大型设备为大面积设备开发的噪声模型，超出了现有模型的一定限制，无法预测单个晶体管的噪声性能，特别是MOSFET。 缺乏准确的模型会导致过程，并大量浪费宝贵的时间。 有必要测量和理解深色MOSFET所展示的噪声源（各种和广泛的频率范围）。***