Porous-Silicon-Layer Adsorption Vapor Sensor

多孔硅层吸附蒸汽传感器

• 批准号: 9714157
• 负责人: Massoud Kaviany
• 金额: $ 18.04万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-11-01 至 1999-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9714157&HistoricalAwards=false
• 关键词: Porous; Silicon; Layer; Adsorption; Vapor

ABSTRACT The principal investigator proposes to study the use of porous silicon layers for improving the performance of vapor sensors. Silicon layers have demonstrated capacitance sensitivity to the amount of vapor absorbed and their use will permit the development of miniaturized sensors which can operate at high temperatures. By optimizing the pore structure, these sensors will have improved sensitivity and with the inclusion of thermoelectric cooling/heating can sense a large range of vapors. Miniaturization will allow for local control of processes and temperatures.

摘要主要研究者建议研究多孔硅层以改善蒸气传感器的性能。 硅层证明了对吸收的蒸气量的电容敏感性，并且它们的使用将允许开发可在高温下运行的微型传感器。 通过优化孔结构，这些传感器将具有提高的灵敏度，并且随着热电冷却/加热的包含，可以感觉到大量的蒸气。 小型化将允许局部控制过程和温度。