Integrated Hot-Phonon Harvesting Barriers in High-Power Circuit Devices

高功率电路器件中的集成热声子收集势垒

• 批准号: 1332807
• 负责人: Massoud Kaviany
• 金额: $ 29.12万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-08-01 至 2018-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1332807&HistoricalAwards=false
• 关键词: Integrated; Hot; Phonon; Harvesting; Barriers

CBET 1332807PI: Massoud Kaviany (U. Michigan)The proposed research aims to use (integrate) a novel hot phonon absorption barrier structure converting phonon energy to harvestable electric potential, in high-power electric circuits and devices. This electric potential barrier (barrier is formed by heterostructures, e.g., Al alloying, and its height matches optical phonon energy) allows only those electrons with high momentum/energy to pass through it, while the remaining electrons with lower energy will have a favorable phonon absorption condition. For the proposed example of GaN high electron mobility transistor, the expected reduction in the maximum operating temperature is as much as 40 degC at 5 W/mm Joule heating rate, and up to 20% of the phonons will be recycled corresponding to the same saving in power consumption (i.e., in-situ direct conversion of emitted phonons back to electric potential energy). The results are expected to also apply to light emitting diodes and other high-power electronics, and contribute to thermal management at atomic scale.The use of a heterobarrier, or abrupt change in material composition, in a circuit allows electricity-generated heat to boost electric potential instead of draining efficiency. Using this architecture in high-power circuits lowers the device temperature and improves the device efficiency. Electrons in a circuit gain energy by absorbing phonons, the interatomic vibrations associated with heat. In a circuit, a ?heterobarrier? may be inserted to take advantage of these excited electrons, boosting them up in electrical potential. The heterobarrier is engineered such that the increase in the band gap energy of the new material is equal to the energy given the electron by the phonons. Monte Carlo simulations based on interaction kinetics between electron and phonon show up to 19% of phonon energy converts to electric potential. This heterobarrier reverses the role of phonon from causing electric potential drop to causing potential gain.

CBET 1332807PI：Massoud Kaviany（美国密歇根州）拟议的研究旨在在高功率电路和设备中使用（整合）一种新型的热声子吸收屏障结构，将声子能量转换为可收获的电势。这种电势势垒（屏障是由异质结构形成的，例如Al合金，并且其高度与光学声子能量相匹配），只有那些具有高动量/能量的电子才能通过它，而其余能量较低的电子将具有有利的声子吸收条件。对于GAN高电子迁移率晶体管的拟议示例，最高工作温度的预期降低在5 W/mm的焦耳加热速率下高达40度，并且最多20％的声子将回收与功耗相同的节省相对应，以相同的功耗（即，回到电势能转换为电势能转换为电势能量）。预计该结果还适用于发射二极管和其他高功率电子设备，并在原子尺度上有助于热管理。在电路中使用异质载体或材料组成的突然变化，可以使电力产生热量以提高电势而不是排水效率。在高功率电路中使用此体系结构可降低设备温度并提高设备效率。电路中的电子通过吸收声子增益能量，即与热有关的原子间振动。在电路中，一个异性载体？可以插入以利用这些激发的电子，从而增强它们的电势。 杂载器的设计使得新材料的带隙能量的增加等于通过声子给定电子的能量。基于电子和声子之间相互作用动力学的蒙特卡洛模拟显示出多达19％的声子能量转换为电势。该异载器逆转了声子引起电势下降的作用，从而导致潜在增益。