Light Scattering Studies of Semiconductor Heterostructure Interfaces

半导体异质结构界面的光散射研究

• 批准号: 9521507
• 负责人: Jose Menendez
• 金额: $ 29.86万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-15 至 2000-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9521507&HistoricalAwards=false
• 关键词: Light; Scattering; Studies; Semiconductor; Heterostructure

9521507 Menendez This research aims, using advanced Raman scattering capabilities, to understand details of growth phenomena affecting disorder at GaAs/AlAs superlattice(SL) interfaces, and interface chemistry and physics relationships to III-V SL optoelectronic properties. This approach will be used to study basic chemical and physical processes that produce disorder at heterojunction during growth. In addition, the vibrational and electronic properties of ultrasmall structures and the stresses in semiconductor devices will be further investigated. The project also includes modeling and simulation to predict phonon frequencies in complex materials for comparison and interpretation of experimental results. %%% An advanced laser light scattering with computer simulation has recently been developed and will be used for basic research of chemical and physical properties of ultrasmall structures, and heterojunction interfaces. This project will be important for advances in microelectronics and photonics because progress in the miniaturization of semiconductor devices depends on the availability of material structures whose crystalline and chemical properties can be controlled at the atomic level. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. ***

9521507 Menendez这项研究的目的是使用先进的拉曼散射能力，以了解影响GAAS/Alas SuperMastratice（SL）接口的生长现象的细节，以及与IIII-V SL OptoElectronic特性的界面化学和物理关系。 这种方法将用于研究生长过程中异质结的基本化学和物理过程。 此外，将进一步研究超质结构的振动和电子性能以及半导体设备中的应力。该项目还包括建模和仿真，以预测复杂材料中的声子频率，以比较和解释实验结果。 %% %%最近已经开发了带有计算机模拟的高级激光散射，并将用于对超质结构的化学和物理性质以及异质结界面的基础研究。该项目对于微电子和光子学的进展非常重要，因为半导体设备的微型化的进展取决于可以在原子水平控制晶体和化学性质的材料结构的可用性。 此外，该计划的一个重要特征是在根本和技术意义的领域中培训研究生和本科生。 ***