FuSe-TG: Monolithic Heterointegration of GeSn and SiGeSn Alloys with Silicon Platforms

FuSe-TG：GeSn 和 SiGeSn 合金与硅平台的单片异质集成

基本信息

批准号：
2235447
负责人：
Jose Menendez
金额：
$ 30万
依托单位：
Arizona State University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2023
资助国家：
美国
起止时间：
2023-05-15 至 2025-04-30
项目状态：
未结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=2235447&HistoricalAwards=false
关键词：
FuSe TG Monolithic Heterointegration GeSn

项目摘要

PART I: NON-TECHNICAL SUMMARYThis Future of Semiconductors (FuSe) project focuses on developing infrared light sensors based on alloys of silicon, germanium, and tin, all of which belong to the fourth group of the Periodic Table. These group-IV materials are chemically compatible, making it possible to integrate light detection and signal processing capabilities (the latter based on pure silicon) on a single, monolithic chip. By contrast, current infrared technology is mainly based on expensive materials that are incompatible with silicon and sometimes even toxic. The grant enables the formation of a team, which consists of investigators from three different universities, to pursue key scientific challenge for the integration of heterogeneous materials is accommodating the difference in size between the atomic blocks that make up their crystal structures. This size mismatch can induce atomic misplacements that degrade the performance of detector devices. The solution requires collaborative work between physicists, chemists, materials scientists, and device engineers. The multidisciplinary character of the team provides a unique educational experience for the future workforce by integrating many different perspectives around the co-design ideas of the FuSe program. The team members have a very diverse and complementary expertise, from circuit design to fully microscopic quantum-mechanical simulations, including the development of new synthetic strategies beyond conventional methods. PART II: TECHNICAL SUMMARYThe team is building research collaborations aimed at overcoming the very large lattice mismatch between silicon and infrared GeSn or SiGeSn alloys (which exceeds 4% and limits the critical thickness for defect-free growth to one or two atomic monolayers) for monolithic integration of detectors and readout components, understanding the ultimate dark current limits of diodes based on GeSn or SiGeSn, and designing readout circuitry matched to these diode characteristics and to the growth of the infrared devices. Within these general research targets, the initial team-building effort is carried out with the purpose of determining the structure of misfit dislocations between GeSn alloys and Si substrates, performing detailed spectroscopy of point defects, understanding dislocations and point defects using first-principles calculations, and eliminating surface defects that contribute to the dark current. During the FuSe Teaming Grant period the team addresses these challenges using a multidisciplinary approach by fully characterizing the structural properties of the alloys and their interface with Si by performing Rutherford Backscattering, Raman, x-ray diffraction, atomic force microscopy, and electron microscopy studies. In particular, the latter makes it possible to determine the nature of the dislocations that control the strain-relaxation progress. The team also evaluates electrical and optical properties of novel passivating dielectrics, antireflection layers and oxides for GeSn or SiGeSn alloys, and the researchers perform systematic spectroscopy studies of defects that can be associated with observed dark currents in GeSn and SiGeSn diodes. These preliminary investigations along with large-scale first-principles theoretical simulations of the defected interfaces and point defects to interpret the observed structural and electrical properties of the alloy devices and the general team-forming activities lay the foundation for future focused, research-intense projects.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

第一部分：半导体项目（FUSE）项目的非技术摘要侧重于基于硅，锗和锡合金开发红外光传感器，所有这些传感器均属于周期表的第四组。这些组IV材料在化学上兼容，可以在单个单片芯片上整合光检测和信号处理能力（后者基于纯硅）。相比之下，当前的红外技术主要基于与硅不兼容的昂贵材料，有时甚至有毒。该赠款使团队的组成由三个不同大学的研究人员组成，以应对构成其晶体结构的原子块之间的大小差异，以应对非均质材料的整合。这种尺寸不匹配会诱导原子错位，从而降低检测器设备的性能。该解决方案需要物理学家，化学家，材料科学家和设备工程师之间的合作工作。团队的多学科特征通过围绕FUSE计划的共同设计思想整合了许多不同的观点，为未来的劳动力提供了独特的教育体验。团队成员具有非常多样化和互补的专业知识，从电路设计到完全显微镜量子力学模拟，包括开发传统方法以外的新合成策略。第二部分：技术摘要团队正在建立研究合作，旨在克服硅和红外GESN或Sigesn合金之间非常大的晶格不匹配（超过4％，并限制了一个或两个原子单层的关键厚度）探测器和读数组件的集成，了解基于GESN或SIGESN的二极管的最终暗电流极限，以及设计与这些二极管特性匹配的读取电路以及红外设备的增长。在这些一般研究目标中，最初的团队建设工作是为了确定GESN合金和SI基板之间的不合适错位的结构，对点缺陷进行详细的光谱，理解位错和点缺陷，并使用第一原则的计算，以下方面的计算，并消除有助于黑暗电流的表面缺陷。在保险丝组合赠款期间，通过多学科方法，团队通过通过进行卢瑟福反向散射，拉曼，X射线衍射，原子力显微镜和电子显微镜研究来充分表征合金的结构特性及其与SI的界面来解决这些挑战。特别是，后者可以确定控制应变 - 释放进展的错位的性质。该团队还评估了GESN或SIGESN合金的新型钝化介电介质，抗反射层和氧化物的电气和光学性能，研究人员对可能与GESN和Sigesn二极管中观察到的深色电流有关的缺陷进行系统的光谱研究。这些初步研究以及对缺陷界面和点缺陷的大规模第一原理理论模拟，以解释合金设备的观察到的结构和电气性能以及一般团队形成的活动为未来的专注，研究 - 研究强大项目奠定了基础该奖项反映了NSF的法定任务，并通过使用基金会的智力优点和更广泛的影响审查标准来评估值得支持。