Light Scattering Studies of Semiconductor Heterostructure Interfaces and Carbon-Based Materials

半导体异质结构界面和碳基材料的光散射研究

• 批准号: 9121567
• 负责人: Jose Menendez
• 金额: $ 22.59万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1996-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9121567&HistoricalAwards=false
• 关键词: Light; Scattering; Studies; Semiconductor; Heterostructure

Fundamental research to elucidate phonon and electron-phonon properties of limited dimension electronic/photonic materials structures, particularly quantum well structures of compound semiconductors, and the recently discovered superconducting fullerenes, K3C60 and Rb3C60 will be conducted. The research is of particular interest for providing a sounder scientific basis for the improvement of epitaxial growth and materials processing techniques, critical to advanced electronics and photonics science and technology. %%% This research is expected to provide deeper fundamental understanding of basic properties of electronic/photonic materials. From an application point of view, understanding these properties and their relationship to materials synthesis and processing is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.

将进行基础研究，以阐明有限尺寸电子/光子材料结构的声子和电子声子特性，特别是化合物半导体的量子阱结构，以及最近发现的超导富勒烯、K3C60和Rb3C60。 该研究特别感兴趣的是为改进外延生长和材料加工技术提供更可靠的科学基础，这对先进电子和光子科学技术至关重要。 %%% 这项研究有望为电子/光子材料的基本特性提供更​​深入的基础理解。 从应用的角度来看，了解这些特性及其与材料合成和加工的关系有利于半导体器件的设计和制造。 研究结果对于大规模、高速集成电子和光子器件和电路技术具有普遍意义。