100-300 GHz Modulated Impurity Concentration Transferred Electron Devices

100-300 GHz 调制杂质浓度转移电子器件

• 批准号: 9202037
• 负责人: Stephen Jones
• 金额: $ 33万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-11-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202037&HistoricalAwards=false
• 关键词: 100; 300; GHz; Modulated; Impurity

Presently, there is no single solid state device which generates moderate amounts of low noise power, and can be used in receivers as a local oscillator source over the 200-300 GHz range. However, we propose a novel Transferred Electron Device (TED) termed the Modulated Impurity Concentration Transferred Electron Device (MICTED) that is expected to generate milliwatts of power up to 300 GHz. The MICTED differs from conventional TEDs by incorporating a modulated doping profile which substantially increases the harmonic content in the current waveform. The increased harmonic content of the MICTED leads to second and third harmonic Transferred Electron Oscillators (TEOs) which deliver more power than TEOs using conventional TEDs. This study will assess the merits of the MICTED as a solid state oscillator source between 100 and 300 GHz, and involve device theory and design, device fabrication and testing, and device simulation. The MICTED is expected to have a significant impact on millimeter wave research where low noise and moderate power local oscillator sources are in great need. Par one of the proposed research is a fundamental feasibility study of the MICTED. This section propose Monte Carlo and Drift/Diffusion device simulations that include harmonic balance calculations. Also, a 94 GHz prototype GaAs MICTED will be designed, fabricated, and tested. In Part two, we will theoretically and experimentally investigate optimized InP MICTEDs for operation up to 300 GHz.

目前，还没有一种固态器件能够产生适度的低噪声功率，并且可以在接收器中用作 200-300 GHz 范围内的本地振荡源。 然而，我们提出了一种新型转移电子器件 (TED)，称为调制杂质浓度转移电子器件 (MICTED)，预计可产生高达 300 GHz 的毫瓦功率。 MICTED 与传统 TED 的不同之处在于，它采用了调制掺杂分布，大大增加了电流波形中的谐波含量。 MICTED 谐波含量的增加导致二次和三次谐波转移电子振荡器 (TEO) 的产生，其比使用传统 TED 的 TEO 提供更多功率。 本研究将评估 MICTED 作为 100 至 300 GHz 固态振荡器源的优点，涉及器件理论和设计、器件制造和测试以及器件仿真。 MICTED 预计将对毫米波研究产生重大影响，毫米波研究非常需要低噪声和中等功率的本地振荡器源。 拟议的研究之一是 MICTED 的基本可行性研究。 本节提出了蒙特卡罗和漂移/扩散装置模拟，其中包括谐波平衡计算。 此外，还将设计、制造和测试 94 GHz 原型 GaAs MICTED。 在第二部分中，我们将从理论上和实验上研究运行频率高达 300 GHz 的优化 InP MICTED。