100-300 GHz Modulated Impurity Concentration Transferred Electron Devices

100-300 GHz 调制杂质浓度转移电子器件

• 批准号: 9202037
• 负责人: Stephen Jones
• 金额: $ 33万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-11-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202037&HistoricalAwards=false
• 关键词: 100; 300; GHz; Modulated; Impurity; 100; 300; GHz; Modulated; Impurity

Presently, there is no single solid state device which generates moderate amounts of low noise power, and can be used in receivers as a local oscillator source over the 200-300 GHz range. However, we propose a novel Transferred Electron Device (TED) termed the Modulated Impurity Concentration Transferred Electron Device (MICTED) that is expected to generate milliwatts of power up to 300 GHz. The MICTED differs from conventional TEDs by incorporating a modulated doping profile which substantially increases the harmonic content in the current waveform. The increased harmonic content of the MICTED leads to second and third harmonic Transferred Electron Oscillators (TEOs) which deliver more power than TEOs using conventional TEDs. This study will assess the merits of the MICTED as a solid state oscillator source between 100 and 300 GHz, and involve device theory and design, device fabrication and testing, and device simulation. The MICTED is expected to have a significant impact on millimeter wave research where low noise and moderate power local oscillator sources are in great need. Par one of the proposed research is a fundamental feasibility study of the MICTED. This section propose Monte Carlo and Drift/Diffusion device simulations that include harmonic balance calculations. Also, a 94 GHz prototype GaAs MICTED will be designed, fabricated, and tested. In Part two, we will theoretically and experimentally investigate optimized InP MICTEDs for operation up to 300 GHz.

目前，没有单个固态设备会产生适量的低噪声功率，并且可以在200-300 GHz范围内用作局部振荡器源。 但是，我们提出了一种称为调制杂质浓度的新型电子设备（TED）传递的电子设备（MIDARD），预计将产生高达300 GHz的毫米。 修订后与常规TED的不同之处是通过合并一个调制掺杂曲线，该掺杂曲线大大增加了当前波形中的谐波含量。 修订后的谐波含量增加会导致第二和第三谐波转移的电子振荡器（TEOS），它比使用常规TEDS提供的功率更多。 这项研究将评估修订物作为固态振荡器源的优点在100至300 GHz之间，并涉及设备理论和设计，设备制造和测试以及设备模拟。 预计将对毫米波研究产生重大影响，在毫米波研究中，低噪声和中等功率的本地振荡器来源非常需要。 拟议的研究中的一项是对婚姻的基本可行性研究。 本节提出了包括谐波平衡计算的蒙特卡洛和漂移/扩散装置模拟。 此外，还将设计，制造和测试一个94 GHz原型GAAS。 在第二部分中，我们将从理论上和实验研究最高300 GHz的INP MATICS进行优化的INP。