Investigation of Non-Equilibrium Epitaxial Growth of Electronic Materials

电子材料非平衡外延生长研究

• 批准号: 9119735
• 负责人: Gianfranco Vidali
• 金额: $ 20.79万
• 依托单位: Syracuse University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-06-15 至 1995-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9119735&HistoricalAwards=false
• 关键词: Investigation; Non; Equilibrium; Epitaxial; Growth

This basic research project utilizes the capabilities unique to thermal atomic beam scattering(ABS)--high sensitivity to low coverage impurities and defects, real time measurement--to obtain detailed structural information for complex surface ordered phases without surface damage or charging effects allowing the study of kinetic, dynamical and structural properties of epitaxy. The research combines the ABS technique with other advanced surface science diagnostic methods to characterize both the growth mode, and the structural and chemical details of epitaxial crystal growth, layer by layer. %%% This research is expected to provide deeper fundamental understanding of epitaxial crystal growth at the atomic level. From an application point of view, understanding the details of crystal growth at this level is particularly helpful to advanced semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.

该基础研究项目利用了热原子束散射（ABS）独有的功能 - 对低覆盖杂质和缺陷的高敏感性，实时测量 - 获取用于复杂表面有序相位的详细结构信息，而无需表面损害或充电效应，从而可以研究运动性，动力学和结构性特性。 该研究将ABS技术与其他先进的表面科学诊断方法结合在一起，以表征生长模式，以及逐层外延晶体生长的结构和化学细节。 %%％这项研究预计将在原子水平上提供对外延晶体生长的更深入的理解。 从应用的角度来看，了解此级别的晶体生长的细节特别有助于高级半导体设备的设计和制造。 结果将以大规模高速集成电子电路技术的一般方式至关重要。