Implementation of Atom Beam Scattering to Study the Growth of Ultra Thin Films

利用原子束散射研究超薄膜的生长

• 批准号: 8802512
• 负责人: Gianfranco Vidali
• 金额: $ 23.46万
• 依托单位: Syracuse University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-12-01 至 1992-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8802512&HistoricalAwards=false
• 关键词: Implementation; Atom; Beam; Scattering; Study

This is an innovative experimental program of research to study fundamental issues in the physics and chemistry of ultra-thin films (one or two atomic layers). This study will implement atom beam scattering as a new technique to investigate the structure and chemical bonding of the atomic layers to the substrate. Materials being studied include metal films on silicon and metals. Studies include geometry and chemical bonding in heteroepitaxy, strained epitaxial films, kinetics of film growth, and electronic characterization of films and interfaces. Low energy electron diffraction and helium ion beam scattering will be used to characterize the structure of the films and interfaces. The research is relevant to processing and properties of integrated electronic circuits. Issues such as doping, Schottky barriers, and metallization will benefit from the research.

这是一项创新的研究计划，用于研究超薄薄膜物理和化学（一两个原子层）的基本问题。 这项研究将实施原子束散射作为一种新技术，以研究原子层与底物的结构和化学键合。 研究的材料包括硅和金属上的金属膜。 研究包括杂田的几何形状和化学键合，薄膜紧张，膜生长动力学以及膜和界面的电子表征。 低能电子衍射和氦离子束散射将用于表征膜和界面的结构。 该研究与集成电子电路的处理和特性有关。 兴奋剂，肖特基屏障和金属化等问题将从研究中受益。