Light Scattering Studies of Semiconductor Heterostructure Interfaces

半导体异质结构界面的光散射研究

• 批准号: 8814918
• 负责人: Jose Menendez
• 金额: $ 21.25万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-02-15 至 1992-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8814918&HistoricalAwards=false
• 关键词: Light; Scattering; Studies; Semiconductor; Heterostructure

The research uses different light scattering techniques to characterize semiconductor heterostructure interfaces and to study the physical properties of these interfaces. Raman scattering by optical and acoustic phonons will be used to investigate the interface morphology. Light scattering by electrons in quantum wells will be used to study the fundamental electronic property of the interface, i.e., the lineup of the energy bands of the two heterostructure materials. The experimental effort focuses on understanding and improving epitaxial growth procedures, with special emphasis on novel systems such as strained layer superlattices and amorphous multi layers grown by plasma enhanced vapor deposition.

该研究使用不同的光散射技术来表征半导体异质结构界面并研究这些接口的物理特性。 光学和声音子的拉曼散射将用于研究界面形态。 量子井中电子的光散射将用于研究界面的基本电子特性，即两种异质结构材料的能带阵容。 实验努力的重点是理解和改善外延生长程序，特别强调了新型系统，例如应变的层超晶格和血浆增强蒸气沉积而生长的无定形多层。