A Double Crystal X-Ray Diffractometer System

双晶X射线衍射仪系统

• 批准号: 8604851
• 负责人: April Brown
• 金额: $ 2.9万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-07-15 至 1987-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8604851&HistoricalAwards=false
• 关键词: Double; Crystal; Ray; Diffractometer; System

This grant is for partial purchase support of an X-Ray Diffractometer System to aid the III-V semiconductor materials research effort at the University of Michigan. The Solid State Electronics Laboratory is presently equipped with a Riber 2300 Molecular Beam Epitaxy (MBE) System used for the growth of III-V semiconductor materials. The epitaxial materials are characterized by photoluminescence, Hall Effect Measurements, and Deep Level Transient Spectroscopy. Currently much research is aimed at the growth and characterization of strained layers formed from heterojunctins composed of materials of different lattice constants. An X-ray Diffractometer System is an invaluable tool in measuring lattice constants and characterizing strains present in mismatched systems.

这笔赠款用于购买 X 射线衍射仪系统的部分支持，以帮助密歇根大学的 III-V 族半导体材料研究工作。 固态电子实验室目前配备了Riber 2300分子束外延（MBE）系统，用于III-V族半导体材料的生长。 外延材料通过光致发光、霍尔效应测量和深能级瞬态光谱进行表征。 目前许多研究的目标是由不同晶格常数材料组成的异质结形成的应变层的生长和表征。 X 射线衍射仪系统是测量晶格常数和表征失配系统中存在的应变的宝贵工具。