窄带硒碲化合物半导体低维纳米结构的控制制备、机理与性能研究

This project is devoted to develop a new synthetic method for the preparation of low-dimensional narrow bandgap compound semiconductor nanostructures under mild conditions, in which the low-dimensional nanostructures of the chalcogenides mainly the narrow bandgap selenides and tellurides can be controllably fabricated and their structures and microstructures can be selectively determined through the variation of reaction conditions in addition to the employment of molecular precursors with functional groups and templating effects selected in the process. Meanwhile, the reaction mechanism of the developed reactions to the compounds and the growth mechanism for the low-dimensional nanostructures will be revealed in this proposal. And also, the as-prepared nanostructures will be further characterized by various techniques including varied-temperature XRD, SEM, TEM, in-situ HRTEM, SAED, EDX, Raman, DSC, XPS, FTIR, ATR-FRIR, GC-MS, NMR, EPR, and etc., and the photoresponding and photodetecting properties in addition to some other physical and chemical properties will be also investigated in the project to understand the relations between their varied structures and properties, which will be favorable for the improvement of fundamental nanophysics and nanochemistry and the potential applications of these low-dimensional narrow bandgap compound nanostructures in energy conversion area including the photoresponding and photodetecting ones.

本申请旨在发展和建立一种新颖温和的窄带化合物半导体的合成与制备方法，侧重研究硒碲等窄带化合物半导体的控制合成及其控制合成原理与规律，并从生长动力学角度研究和探明该类硒碲等窄带化合物半导体低维纳米结构的生长过程和生长机理，实现硒碲等窄带化合物半导体低维纳米结构的可控制备与生长。同时研究和分析所制备的硒碲等窄带化合物半导体低维纳米结构的组成、结构、微结构、表面/界面结构和物化性质，并侧重研究其光电响应和光电探测等能量转换相关性能，探明其组成、结构与其性能间的内在关系与规律，为窄带化合物半导体的控制生长、性能拓展以及其快速光电探测性能应用提供可能的基础。

窄带化合物半导体在热电、红外、传感和探测等众多领域中均有广泛用途。本项目研究建立和发展了多种窄带化合物半导体低维纳米结构的温和合成方法及制备路线，实现了1T'-ReSe2-x、Bi2Se3、Sb2Se3、孪晶超格子InSb和MoSe2-Bi2Se3等多种化合物半导体低维纳米材料的设计合成与控制生长。建立和发展了MnS和MnSe等介稳相低维纳米结构的‘液-固-固（Solution-Solid-Solid，SSS）’模型的催化生长。同时，研究探明了多种所制备低维纳米结构的组成、结构、微结构、电子结构和生长机理，研究发掘了其在电化学催化及在光电响应与探测等领域中的相关应用性能。此外，还发展了Pb5S2I6晶体、Pt纳米晶和Ni3S4纳米棒/C3N4纳米片/N-Gr复合结构等多种材料的温和路线制备及性能拓展研究，并取得了一些有意义的研究结果。总之，本项目研究的意义在于建立和发展了一些低维纳米结构的温和合成方法和制备途径，并拓展了其在能量转换和光电探测等领域中的研究与应用范围。部分相关研究结果已经发表在SCI学术期刊上，共计26篇。其中，含第一标注论文Journal of Materials Chemistry A、Nano Letters、Advanced Functional Materials、Inorganic Chemistry、Crystal Growth & Design、ACS Applied Materials & Interfaces、ACS Omega、Nanomedicine: Nanotechnology, Biology and Medicine和RSC Advances等共12篇；第二标注论文Nano Letters、Chemistry of Materials、Journal of Materials Chemistry A、ACS Applied Materials & Interfaces、Nanoscale、Nano Research、APL Materials、Advanced Materials Interfaces等共11篇及第三标注3篇；另后续相关待发表工作将继续标注并及时报送。研究期间获得授权发明专利4项；培养毕业博士研究生5名，硕士研究生4名。

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