硅基微波超宽带有源数控移相器的高精度及平坦化研究

In view of the broad application prospects of microwave ultra wideband active phase shift technology in future radar, ultra-wideband communication, cognitive radio system and other fields of information perception, and with the development trend of the silicon based system on a chip(SoC), how to achieve an phase shifter with good precision and flatness performance based on silicon technology becomes a research hotspot at present. This topic is intended for the characteristic frequency band of signal frequency S-K band, center frequency X-band, and relative bandwidth greater than 200%, study the mechanism of phase error within ultra wideband, establish a phase shift error model with multi-constraints. Analyzing the phase shift error feasible domain and parasitic model of quadrature network, propose a low-loss high-accuracy quadrature network structure. Analyzing the function of gain control accuracy and AM-PM error within ultra wideband, and propose a high-precision gain control method based on the current array synthesis. Researching the variation of gain and signal frequency within ultra wideband, and compensating the gain fading at high frequency based on the pole-zero cancellation method, proposing a restructuring ciricuit with good bandwidth and gain flatness characteristics. Finally, based on above research results, forming a optimization method of precision and flatness for microwave ultra wideband active phase shifter, establishing the evaluation factors include pricision, bandwidth and flatness performance parameter. The research results will effectively support the research and design of high-performance ultra wideband silicon-based microwave digital controlled active phase shifter.

鉴于微波超宽带有源移相技术在雷达探测、超宽带通信和认知无线电等信息感知领域的广阔应用前景和硅基片上系统的发展趋势，如何基于硅工艺在超宽频带内实现高精度移相成为目前的研究热点。本课题拟针对信号频率S-K波段，中心频率X波段，相对带宽大于200%的特征频段，研究超宽带内移相误差产生机理，建立多约束移相误差模型；分析正交网络移相误差可行域和寄生参数模型，提出一种低差损高精度正交网络结构；分析超宽频带内增益控制精度与AM-PM误差的函数关系，提出基于电流阵列综合的高精度增益控制方法；研究超宽带内增益与信号频率的变化关系，基于零极点相消方法补偿高频处的增益衰落，提出一种具有良好带宽和增益平坦特性的增益调整结构。最后，基于上述研究成果形成硅基微波超宽带有源移相器的精度及平坦性优化方法，建立包含移相精度、带宽和平坦性等指标的最优化因子，研究成果将有效支撑硅基高精度超宽带有源数控移相器的研究与设计。

鉴于微波超宽带有源移相技术在雷达探测、超宽带通信和认知无线电等信息感知领域的广阔应用前景和硅基片上系统的发展趋势，如何基于硅工艺在超宽频带内实现高精度移相成为目前的研究热点。本课题拟针对信号频率S-K波段，中心频率X波段，相对带宽大于200%的特征频段，研究超宽带内移相误差产生机理，建立多约束移相误差模型；分析正交网络移相误差可行域和寄生参数模型，提出一种低差损高精度正交网络结构；分析超宽频带内增益控制精度与AM-PM误差的函数关系，提出基于电流阵列综合的高精度增益控制方法；研究超宽带内增益与信号频率的变化关系，基于零极点相消方法补偿高频处的增益衰落，提出一种具有良好带宽和增益平坦特性的增益调整结构。本项目在国内外重要刊物发表SCI论文3篇，申请/授权国家发明专利19项。最后，基于上述研究成果形成了硅基微波超宽带有源移相器的精度及平坦性优化方法，有效支撑硅基高精度超宽带有源数控移相器的研究与设计。投片测试结果：信号频率6-18GHz，输入匹配小于-18.5dB，相位和增益的RMS误差分别是3.94° 和2.67 dB，1dB压缩点-14.6dB，功耗89.1mW，表明本项目相关研究取得了良好的效果。

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