AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.

AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。

• 批准号: RGPIN-2018-05345
• 负责人: Wasilewski, Zbigniew
• 金额: $ 5.68万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=751672
• 关键词: AIIIBV; Molecular; Beam; Epitaxial; structures

The roots of the technological revolution which brought about personal computers, fast internet, digital cameras and flat panel displaysto mention just the commodity sectorcan be traced directly to the advances in engineering of very thin films of artificial materials. The highest performance electronic devices, such as transistors used in smartphones or satellites, and photonic devices such as semiconductor lasers supporting the ultra-high speed information transfer along the optical fiber networks are all based on highly perfect crystalline multilayers of semiconductor materials which are deposited using epitaxial processes. For such nanoengineering, molecular beam epitaxy (MBE) is arguably the most powerful tool. Because the process is conducted in ultra-high vacuum (UHV), contamination by foreign molecules is minimized. This is vital, since even a single contaminant atom in a strategic part of the nanostructure can alter its properties considerably. A UHV environment also enables unparalleled precision through real-time monitoring and control of the epitaxial process with sophisticated surface science instruments and other in-situ monitoring tools. Nevertheless, the technique is far from maturity; monitoring, understanding and controlling the processes involved in this technique continues to be a subject of intense research around the world. The proposed program will further our current understanding and improve the control of the MBE growth processes in arsenides- and antimondies-based heterostructures, aluminum and indium single-crystal superconducting layers, as well as related semiconductor-superconductor heterostructures. The research will focus on the most critical elements for the next generation devices with respect to aspects of epitaxial growth, i.e. surface processes and morphological control, interface formation, and strain control, as well as dislocation filtration for the case of so-called metamorphic buffers. Close feedback will be established with the performance of photonic and electronic devices fabricated using heterostructures relying on such optimized growth procedures. The program is expected to lead to new breakthroughs in the control of artificial materials at the atomic scale, which is critically important to further progress in areas of technology where device functionality increasingly relies on quantum phenomena. Examples include advanced photonics & ICT, quantum information processing, renewable energy harvesting and ultra-low power electronics. The resulting intellectual property, know-how and the steady stream of highly qualified personnel will leverage the strong position of the Canadian high-tech industry in the global markets.

技术革命的根源带来了个人计算机，快速的互联网，数码相机和平面面板显示器，提到只有商品扇区才能直接追溯到工程非常薄的人造材料薄膜的进步。最高性能的电子设备，例如用于智能手机或卫星中的晶体管，以及支持沿光纤网络的超高速度信息传输的半导体激光器等光子设备都是基于高度完美的结晶多层的半导体材料的材料的材料，这些材料是使用表达过程沉积的。对于这种纳米工程，分子束外延（MBE）可以说是最强大的工具。由于该过程是在超高真空（UHV）中进行的，因此将外国分子污染最小化。这是至关重要的，因为即使在纳米结构的战略部分中的一个污染物也可以大大改变其性质。 UHV环境还可以通过实时监控和控制精致的表面科学仪器和其他原位监控工具来实时监控和控制外延过程。然而，该技术远非成熟。监视，理解和控制该技术所涉及的过程仍然是全球强烈研究的主题。拟议的计划将进一步我们当前的理解，并改善基于砷和反抗小体的异质结构，铝和二晶层超导层以及相关的半导体 - 驱动器 - 驱动器 - 驱动器异质结构的控制MBE生长过程。该研究将关注下一代设备的最关键要素，即外延生长的各个方面，即表面过程和形态控制，界面形成和菌株控制以及脱位过滤，用于所谓的变质缓冲液。通过依靠这种优化的生长程序制造的光子和电子设备的性能，将建立密切反馈。预计该计划将导致原子量表控制人造物质的新突破，这对于在设备功能越来越依赖量子现象的技术领域进步至关重要。示例包括高级光子学和ICT，量子信息处理，可再生能源收集和超低功率电子产品。由此产生的知识产权，专有技术和稳定的高素质人员将利用加拿大高科技行业在全球市场中的强大地位。