AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.

AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。

• 批准号: 436213-2013
• 负责人: Wasilewski, Zbigniew
• 金额: $ 3.72万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2016
• 资助国家: 加拿大
• 起止时间: 2016-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=596891
• 关键词: AIIIBV; Molecular; Beam; Epitaxial; structures

The roots of the technological revolution which brought about personal computers, fast internet, digital cameras and flat panel displays-to mention just the commodity sector-can be traced directly to the advances in engineering of very thin films of artificial materials. The highest performance electronic devices, such as transistors used in smartphones or satellites, and photonic devices such as semiconductor lasers supporting the ultra-high speed information transfer along the optical fiber networks, are all based on highly perfect crystalline multilayers of semiconductor materials which are deposited using epitaxial processes. Of these devices the Quantum Cascade Lasers (QCLs) represent perhaps the greatest achievement of the epitaxial technology and the greatest triumph of the band theory of solids and band engineering. The active regions of these lasers are typically made of well over a thousand distinct thin layers - quantum wells and barriers - some just a couple of atomic layers thick. Even though the effective thickness of each such quantum barrier can be controlled to within a fraction of an atomic layer, it is the quality of interfaces between the wells and the barriers that limits the device performance. We recently demonstrated the world's record operating temperature of 200K for QCLs working in the very difficult THz spectral region. Increasing their operating temperature to 240K will bring these devices into the mainstream of applications and it is clear that interfacial structure needs to be controlled at atomic scale to achieve this goal. Such control is in fact of paramount importance to many other quantum devices, since as their size shrinks the interfacial regions start to dominate their behaviour. Understanding and controlling the processes of interface formation at atomic scale in Molecular Beam Epitaxy is the key focus of the proposed research program. Insights gained will be used to improve performance of THz QCLs, Quantum Hot Electron Transistors and quantum structures identified as candidates for revolutionary Topological Quantum Computers. The resulting intellectual properties, know-hows and the steady stream of highly qualified personnel will leverage the strong position of the Canadian high-tech industry in the global markets.

技术革命的根源，它带来了个人计算机，快速的互联网，数码相机和平面面板显示器，并提及只有商品行业范围直接追溯到工程非常薄的人造材料薄膜的进步。性能最高的电子设备，例如用于智能手机或卫星的晶体管，以及支持沿光纤网络的超高速度信息传输的光子设备，都是基于高度完美的结晶多层，这些晶体是使用表演过程沉积的半导体材料的高度完美的结晶材料。在这些设备中，量子级联激光器（QCL）代表了外延技术的最大成就，也是固体和乐队工程理论的最大胜利。这些激光器的活性区域通常由一千多个不同的薄层（量子井和障碍物）制成，其中一些仅几个原子层厚。即使每个这样的量子屏障的有效厚度都可以控制在原子层的一部分之内，但限制了设备性能的井和障碍之间的接口质量。最近，我们证明了在非常困难的THZ光谱区域工作的QCL的世界创纪录的200K工作温度。将其工作温度提高到240K将使这些设备将这些设备带入应用程序的主流，很明显，界面结构需要在原子量规模上控制以实现此目标。这种控制实际上对许多其他量子设备至关重要，因为随着它们的大小缩小，界面区域开始主导其行为。理解和控制分子束外延下原子量表的界面形成过程是拟议研究计划的重点。获得的见解将用于提高THZ QCL的性能，量子热电子晶体管和被确定为革命性拓扑量子计算机候选者的量子结构。由此产生的知识产权，知识和高素质人员的稳定流将利用加拿大高科技行业在全球市场中的强大地位。