III-nitride selective epitaxial nanostructures: From full-color light sources to solid-state single photon sources

III族氮化物选择性外延纳米结构：从全色光源到固态单光子源

• 批准号: RGPIN-2021-04250
• 负责人: Sadaf, Sharif
• 金额: $ 1.75万
• 依托单位: Institut national de la recherche scientifique
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2021
• 资助国家: 加拿大
• 起止时间: 2021-01-01 至 2022-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=742884
• 关键词: III; nitride; selective; epitaxial; nanostructures

Scientific breakthroughs and technological progress in semiconductor physics, and processing had a transformative impact in virtually every aspect of our lives over the last few decades. Group III-nitrides (GaN and its alloys) is currently at the frontier of this field and offer unique opportunities for many existing and emerging applications, ranging from solid state lighting, full-color projection display, augmented/virtual reality to quantum applications. Epitaxial III-nitride nanowire-based devices including LEDs, lasers, micro-LEDs, and single photon sources have attracted tremendous interest in the recent years for a broad range of important applications. However, several key technological challenges need to be solved before the full potential of group III-nitrides for such applications can be realized. This research program aims at addressing these challenges and develop III-nitride devices which will surpass the existing alternatives both in cost and efficiency. It will be done by developing defects-free InGaN and AlGaN quantum dot-in-nanowire devices with high quantum efficiency in the deep visible (green, amber and red) and ultraviolet wavelengths. Drawing on my expertise and experience through innovations in design, epitaxial growth, device fabrications and characterizations of III-nitride devices, the research program focuses on two specific areas of great practical significance: full-color light sources, and single photon sources for quantum applications. High power, self-emissive nanoscale light emitters operating in the challenging and/or inefficient green/yellow and red spectral region are required for full-color LED lighting, display, and augmented/virtual reality applications. I propose to develop next generation full-color red, green and blue (RGB) LEDs monolithically integrated on a single chip through innovations in nearly defects-free InGaN/GaN nanowire heterostructures. Over the next 5 years, I will investigate InGaN photonic crystal nanowire array surface-emitting light emitters. To date, there have been no reliable single photon sources which can operate at >room temperature and over a wide spectral range. III-nitrides exhibit tunable energy band gaps and large exciton binding energy which are critical for quantum applications in hot environments such as data center and on-chip communications. I will develop site-selective quantum dot embedded in single nanowire over a wide spectral range (ultraviolet to deep visible) and at above room temperature. The proposed research program will help establish Canada as a leader in this emerging branch of nanophotonics and quantum research. The program will provide an alternative path for achieving ultrahigh efficiency lighting and single photon emission using unique selective area epitaxial growth and fabrication techniques. It will also provide an ideal platform for HQP training who will gain hands-on experience in design, growth, nanofabrication and characterizations.

在过去的几十年里，半导体物理和加工领域的科学突破和技术进步几乎对我们生活的各个方面产生了变革性的影响。 III族氮化物（GaN及其合金）目前处于该领域的前沿，为许多现有和新兴应用提供了独特的机会，从固态照明、全彩投影显示、增强/虚拟现实到量子应用。近年来，基于外延 III 族氮化物纳米线的器件（包括 LED、激光器、微型 LED 和单光子源）因其广泛的重要应用而引起了人们的极大兴趣。然而，在充分发挥 III 族氮化物在此类应用中的潜力之前，需要解决几个关键的技术挑战。该研究计划旨在解决这些挑战并开发III族氮化物器件，该器件在成本和效率上都将超越现有的替代品。这将通过开发在深可见光（绿光、琥珀色和红光）和紫外波长下具有高量子效率的无缺陷 InGaN 和 AlGaN 纳米线量子点器件来实现。凭借我在设计、外延生长、器件制造和III族氮化物器件表征方面创新的专业知识和经验，该研究项目重点关注两个具有重大实际意义的特定领域：全色光源和用于量子应用的单光子源。 全彩 LED 照明、显示器和增强/虚拟现实应用需要在具有挑战性和/或低效的绿/黄和红光谱区域中工作的高功率、自发射纳米级发光器。我建议通过几乎无缺陷的 InGaN/GaN 纳米线异质结构的创新，开发单片集成在单个芯片上的下一代全彩红、绿和蓝 (RGB) LED。在接下来的 5 年内，我将研究 InGaN 光子晶体纳米线阵列表面发射光发射器。 迄今为止，还没有可靠的单光子源可以在>室温和宽光谱范围内工作。 III 族氮化物具有可调节的能带隙和大的激子结合能，这对于数据中心和片上通信等热环境中的量子应用至关重要。我将在宽光谱范围（紫外线到深可见光）和高于室温的条件下开发嵌入单纳米线的位点选择性量子点。拟议的研究计划将有助于使加拿大成为纳米光子学和量子研究这一新兴分支的领导者。该计划将提供使用独特的选择性区域外延生长和制造技术实现超高效率照明和单光子发射的替代途径。它还将为 HQP 培训提供一个理想的平台，他们将获得设计、生长、纳米制造和表征方面的实践经验。