AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.

AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。

• 批准号: RGPIN-2018-05345
• 负责人: Wasilewski, Zbigniew
• 金额: $ 2.84万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=713305
• 关键词: AIIIBV; Molecular; Beam; Epitaxial; structures

The roots of the technological revolution which brought about personal computers, fast internet, digital cameras and flat panel displaysto mention just the commodity sectorcan be traced directly to the advances in engineering of very thin films of artificial materials. The highest performance electronic devices, such as transistors used in smartphones or satellites, and photonic devices such as semiconductor lasers supporting the ultra-high speed information transfer along the optical fiber networks are all based on highly perfect crystalline multilayers of semiconductor materials which are deposited using epitaxial processes. For such nanoengineering, molecular beam epitaxy (MBE) is arguably the most powerful tool. Because the process is conducted in ultra-high vacuum (UHV), contamination by foreign molecules is minimized. This is vital, since even a single contaminant atom in a strategic part of the nanostructure can alter its properties considerably. A UHV environment also enables unparalleled precision through real-time monitoring and control of the epitaxial process with sophisticated surface science instruments and other in-situ monitoring tools. Nevertheless, the technique is far from maturity; monitoring, understanding and controlling the processes involved in this technique continues to be a subject of intense research around the world. The proposed program will further our current understanding and improve the control of the MBE growth processes in arsenides- and antimondies-based heterostructures, aluminum and indium single-crystal superconducting layers, as well as related semiconductor-superconductor heterostructures. The research will focus on the most critical elements for the next generation devices with respect to aspects of epitaxial growth, i.e. surface processes and morphological control, interface formation, and strain control, as well as dislocation filtration for the case of so-called metamorphic buffers. Close feedback will be established with the performance of photonic and electronic devices fabricated using heterostructures relying on such optimized growth procedures. The program is expected to lead to new breakthroughs in the control of artificial materials at the atomic scale, which is critically important to further progress in areas of technology where device functionality increasingly relies on quantum phenomena. Examples include advanced photonics & ICT, quantum information processing, renewable energy harvesting and ultra-low power electronics. The resulting intellectual property, know-how and the steady stream of highly qualified personnel will leverage the strong position of the Canadian high-tech industry in the global markets.

带来个人电脑、快速互联网、数码相机和平板显示器（仅提及商品领域）的技术革命的根源可以直接追溯到人造材料超薄薄膜工程的进步。最高性能的电子设备，例如智能手机或卫星中使用的晶体管，以及支持沿光纤网络超高速信息传输的半导体激光器等光子设备，都基于高度完美的半导体材料晶体多层，这些材料使用沉积技术沉积而成。外延工艺。对于此类纳米工程，分子束外延（MBE）可以说是最强大的工具。由于该过程是在超高真空 (UHV) 中进行，因此可以最大程度地减少外来分子的污染。这一点至关重要，因为即使是纳米结构的重要部分中的单个污染物原子也可以显着改变其特性。特高压环境还通过先进的表面科学仪器和其他现场监测工具对外延过程进行实时监测和控制，实现无与伦比的精度。然而，该技术还远未成熟；监测、理解和控制该技术所涉及的过程仍然是世界各地深入研究的主题。拟议的计划将进一步加深我们目前的理解，并改善对砷化物和锑基异质结构、铝和铟单晶超导层以及相关半导体超导体异质结构中 MBE 生长过程的控制。该研究将重点关注下一代器件在外延生长方面最关键的要素，即表面工艺和形态控制、界面形成和应变控制，以及所谓变质缓冲器情况下的位错过滤。使用依赖于这种优化的生长程序的异质结构制造的光子和电子器件的性能将建立密切的反馈。该计划预计将在原子尺度上控制人造材料方面取得新突破，这对于设备功能越来越依赖量子现象的技术领域的进一步进步至关重要。例子包括先进的光子学和信息通信技术、量子信息处理、可再生能源收集和超低功耗电子产品。由此产生的知识产权、专业知识和源源不断的高素质人才将利用加拿大高科技产业在全球市场上的强势地位。