AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.

AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。

• 批准号: RGPIN-2018-05345
• 负责人: Wasilewski, Zbigniew
• 金额: $ 2.84万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2018
• 资助国家: 加拿大
• 起止时间: 2018-01-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=668225
• 关键词: AIIIBV; Molecular; Beam; Epitaxial; structures

The roots of the technological revolution which brought about personal computers, fast internet, digital cameras and flat panel displays—to mention just the commodity sector—can be traced directly to the advances in engineering of very thin films of artificial materials. The highest performance electronic devices, such as transistors used in smartphones or satellites, and photonic devices such as semiconductor lasers – supporting the ultra-high speed information transfer along the optical fiber networks – are all based on highly perfect crystalline multilayers of semiconductor materials which are deposited using epitaxial processes. For such nanoengineering, molecular beam epitaxy (MBE) is arguably the most powerful tool. Because the process is conducted in ultra-high vacuum (UHV), contamination by foreign molecules is minimized. This is vital, since even a single contaminant atom in a strategic part of the nanostructure can alter its properties considerably. A UHV environment also enables unparalleled precision through real-time monitoring and control of the epitaxial process with sophisticated surface science instruments and other in-situ monitoring tools. Nevertheless, the technique is far from maturity; monitoring, understanding and controlling the processes involved in this technique continues to be a subject of intense research around the world. The proposed program will further our current understanding and improve the control of the MBE growth processes in arsenides- and antimondies-based heterostructures, aluminum and indium single-crystal superconducting layers, as well as related semiconductor-superconductor heterostructures. The research will focus on the most critical elements for the next generation devices with respect to aspects of epitaxial growth, i.e. surface processes and morphological control, interface formation, and strain control, as well as dislocation filtration for the case of so-called metamorphic buffers. Close feedback will be established with the performance of photonic and electronic devices fabricated using heterostructures relying on such optimized growth procedures. The program is expected to lead to new breakthroughs in the control of artificial materials at the atomic scale, which is critically important to further progress in areas of technology where device functionality increasingly relies on quantum phenomena. Examples include advanced photonics & ICT, quantum information processing, renewable energy harvesting and ultra-low power electronics. The resulting intellectual property, know-how and the steady stream of highly qualified personnel will leverage the strong position of the Canadian high-tech industry in the global markets.**

带来个人电脑、快速互联网、数码相机和平板显示器（仅提及商品领域）的技术革命的根源可以直接追溯到超薄人造材料工程的进步——最高性能的电子产品。智能手机或卫星中使用的晶体管等器件，以及半导体激光器等光子器件（支持沿光纤网络的超高速信息传输）都高度基于使用外延工艺沉积的完美结晶多层半导体材料.对于这样的在纳米工程中，分子束外延 (MBE) 可以说是最强大的工具，因为该过程是在超高真空 (UHV) 中进行的，因此可以最大限度地减少外来分子的污染，因为即使是重要部件中的单个污染物原子。超高压环境还可以通过先进的表面科学仪器和其他原位监测工具实时监测和控制外延过程，从而显着改变其特性。成熟度；监测、理解和控制该技术所涉及的过程仍然是世界各地深入研究的主题。拟议的计划将进一步加深我们对基于砷化物和锑的 MBE 生长过程的控制。该研究将重点关注下一代器件在外延生长方面最关键的元素。即表面过程和形态控制、界面形成和应变控制，以及所谓变质缓冲器情况下的位错过滤，将与使用依赖于这种优化生长的异质结构制造的光子和电子器件的性能建立紧密的反馈。该计划预计将在原子尺度的人造材料控制方面取得新的突破，这对于设备功能越来越依赖量子现象的技术领域的进一步进步至关重要。信息通信技术、量子信息处理、可再生能源收集和超低功耗电子技术所产生的知识产权、专业知识和源源不断的高素质人才将利用加拿大高科技产业在全球市场上的强势地位。* *