InGaN-based micro-light emitting diode (LED) arrays integrated with a driving circuit backplane

集成驱动电路背板的 InGaN 基微型发光二极管 (LED) 阵列

• 批准号: 520229-2017
• 负责人: Ban, Dayan
• 金额: $ 20.68万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=697095
• 关键词: InGaN; based; micro; light; emitting

InGaN/GaN based micrometer-sized light emitting diode (µ-LED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical question can be answered - how to achieve high resolution while still retaining high emission efficiency? In this project, we will work closely with our industry partner - VueReal Technologies Inc., a Waterloo-based high-tech company, to explore and develop a new technical approach that can enhance the optical emission efficiency of µ-LEDs in a high-resolution two-dimensional (2D) array format. The 2D µ-LED arrays are integrated with a driving circuit backplane. The research objectives include 1) To develop an optimized dry and/or wet etching process for minimizing sidewall defects/impurities, 2) To fabricate 2D blue µ-LED array devices for achieving optimum device performance, 3) To develop a new detaching and transferring approach to integrate the blue µ-LED devices with an IC backplane substrate, 4) To design a CMOS-based IC backplane that drives the 2D µ-LED array for high-quality and uniform optical emission. This project will also provide an excellent opportunity for highly qualified personal (HQP) to gain hands-on experience with device fabrication and characterization, as well as display technologies. This collaboration project will provide the much urgently-needed expertise and facilities at the University of Waterloo to the industry partner for their device R&D activities. It is expected that novel display techniques/prototypes derived from this project can be commercialized by the industry partner, which would establish a leadership position for the industry partner within this fast-growing portable device market, such as virtual reality (VR) devices, augmented reality devices, smartphones, wearable electronics.

基于Ingan/GAN的微米大小的发光二极管（µ-LED）成为下一代高分辨率高分辨率，高效效率的非常有前途的技术，因为它在现有产品中具有重要优势 - 其亮度水平可以比液体 - 晶状体效果（LCD）（LCD）和有机灯光diode（Ol-Emitting Diode（Ol-Emitte）（Ol-Emitde）（Ol-Emitde）（Olemite）高几个。它的电压要求低，并且适合杂交完整的金属氧化物半导体（CMOS）和集成电路（IC）组件。但是，在回答一个关键问题之前，该技术无法商业化 - 如何在仍保持高排放效率的同时实现高分辨率？在这个项目中，我们将与我们的行业合作伙伴-Vuereal Technologies Inc.（一家位于滑铁卢的高科技公司）探索和开发一种新的技术方法，以提高高分辨率二维（2d）阵列格式的µLED的光学排放效率。 2d µLED阵列与驱动电路背板集成在一起。研究目标包括1）开发优化的干燥和/或湿蚀刻过程，以最大程度地减少侧壁缺陷/杂质，2）制造2D蓝色µLED阵列设备，以实现最佳设备性能，3）开发新的分离和转移方法，以使蓝色µ µ基于IC Backane sepplane substrate sudplane substrate in Ictlate substrate in Ictlate sesplate，以设计complane seplane seplate s a cm s a compe s a cm a cm s a cm s a com用于高质量和均匀光发射的阵列。该项目还将为高素质的个人（HQP）提供一个绝佳的机会，以获得设备制造和表征以及展示技术的动手体验。该合作项目将为滑铁卢大学提供急需的专业知识和设施，为其设备研发活动提供行业合作伙伴。可以预期，该项目的新颖显示技术/原型可以由行业合作伙伴进行商业化，该合作伙伴将在这个快速增长的便携式设备市场中为行业合作伙伴建立领导地位，例如虚拟现实（VR）设备（VR）设备，增强现实设备，智能手机，可穿戴电子学。