Scalable group V two-dimensional materials for mid-infrared optoelectronics
用于中红外光电的可扩展V族二维材料
基本信息
- 批准号:506700-2017
- 负责人:
- 金额:$ 16.38万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Strategic Projects - Group
- 财政年份:2019
- 资助国家:加拿大
- 起止时间:2019-01-01 至 2020-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Two-dimensional (2D) materials are an emerging class of quantum materials providing a rich playground to investigate quantum and nanoscale processes and exploit them in innovative devices. The integration of these materials in scalable electronic, optoelectronic, and photovoltaic devices is still hindered by one or more of the following major limitations: (i) the absence of semiconducting bandgap; (ii) the inherent instability and degradation in ambient air; and (iii) the limited scalability due to the lack of large area synthesis processes. With this perspective, this project will focus on establishing a novel family of monoelemental 2D materials aiming at circumventing these limitations in order to harness quantum confinement properties in scalable devices involving integration processes compatible with the current semiconductor technology. The core strategy here is to establish group V 2D materials: Antimonene (2D antimony) and arsenene (2D arsenic) heterostructures and devices. Unlike the current 2D materials, group V 2D materials are highly stable and exhibit a tunable bandgap in the 0.36 to 2.62 eV range (blue to mid-infrared wavelength) in addition to graphene-like 2D confinement properties. Within the framework of this project, these properties will be thoroughly investigated and exploited to design and implement innovative, cost-effective mid-infrared light emitting devices operating in the 3-5 µm wavelength. To tackle this exciting research, the multidisciplinary team will develop and utilize theoretical approaches and experimental equipment that have never been combined heretofore. This world-class collaborative research has a strong potential to generate new scientific and technological knowledge that will contribute to shape the future of the emerging 2D materials and devices.
二维(2D)材料是一类新兴的量子材料,为研究量子和纳米尺度过程并在创新设备中利用它们提供了丰富的平台,但这些材料在可扩展电子、光电和光伏设备中的集成仍然受到阻碍。或更多以下主要限制:(i)缺乏半导体带隙;(ii)环境空气中固有的不稳定性和退化;以及(iii)由于缺乏大面积合成工艺而导致的可扩展性有限。从角度来看,该项目将专注于建立一系列新型单元素二维材料,旨在规避这些限制,以便利用涉及与当前半导体技术兼容的集成工艺的可扩展器件中的量子限制特性。这里的核心策略是建立 V 族二维材料。材料:锑烯(2D 锑)和砷烯(2D 砷)异质结构和器件与当前的 2D 材料不同,V 族 2D 材料高度稳定并表现出可调性。 0.36 至 2.62 eV 范围(蓝色至中红外波长)的带隙以及类石墨烯的 2D 限制特性,这些特性将得到彻底研究和利用,以设计和实施创新的、具有成本效益的。为了完成这项令人兴奋的研究,多学科团队将开发和利用迄今为止从未结合的理论方法和实验设备。这项世界级的合作研究具有产生新科学和技术知识的强大潜力,将有助于塑造新兴二维材料和设备的未来。
项目成果
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Moutanabbir, Oussama其他文献
Growth and Luminescence of Polytypic InP on Epitaxial Graphene
- DOI:
10.1002/adfm.201705592 - 发表时间:
2018-02-21 - 期刊:
- 影响因子:19
- 作者:
Mukherjee, Samik;Nateghi, Nima;Moutanabbir, Oussama - 通讯作者:
Moutanabbir, Oussama
Heterogeneous Integration of Compound Semiconductors
- DOI:
10.1146/annurev-matsci-070909-104448 - 发表时间:
2010-01-01 - 期刊:
- 影响因子:0
- 作者:
Moutanabbir, Oussama;Goesele, Ulrich - 通讯作者:
Goesele, Ulrich
Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn
- DOI:
10.1021/acs.cgd.0c00270 - 发表时间:
2020-05-06 - 期刊:
- 影响因子:3.8
- 作者:
Nicolas, Jerome;Assali, Simone;Moutanabbir, Oussama - 通讯作者:
Moutanabbir, Oussama
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
- DOI:
10.1021/acsphotonics.1c01728 - 发表时间:
2022-03-16 - 期刊:
- 影响因子:7
- 作者:
Luo, Lu;Assali, Simone;Moutanabbir, Oussama - 通讯作者:
Moutanabbir, Oussama
Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale
- DOI:
10.1149/09805.0447ecst - 发表时间:
2020-09-08 - 期刊:
- 影响因子:0
- 作者:
Koelling, Sebastian;Assali, Simone;Moutanabbir, Oussama - 通讯作者:
Moutanabbir, Oussama
Moutanabbir, Oussama的其他文献
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{{ truncateString('Moutanabbir, Oussama', 18)}}的其他基金
Nanoscale and Quantum Semiconductors
纳米和量子半导体
- 批准号:
CRC-2017-00229 - 财政年份:2022
- 资助金额:
$ 16.38万 - 项目类别:
Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
- 批准号:
RGPIN-2017-06893 - 财政年份:2022
- 资助金额:
$ 16.38万 - 项目类别:
Discovery Grants Program - Individual
Nanoscale And Quantum Semiconductors
纳米和量子半导体
- 批准号:
CRC-2017-00229 - 财政年份:2021
- 资助金额:
$ 16.38万 - 项目类别:
Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
- 批准号:
RGPIN-2017-06893 - 财政年份:2021
- 资助金额:
$ 16.38万 - 项目类别:
Discovery Grants Program - Individual
Nanoscale and Quantum Semiconductors
纳米和量子半导体
- 批准号:
CRC-2017-00229 - 财政年份:2020
- 资助金额:
$ 16.38万 - 项目类别:
Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
- 批准号:
RGPIN-2017-06893 - 财政年份:2020
- 资助金额:
$ 16.38万 - 项目类别:
Discovery Grants Program - Individual
Nanoscale and Quantum Semiconductors
纳米和量子半导体
- 批准号:
CRC-2017-00229 - 财政年份:2019
- 资助金额:
$ 16.38万 - 项目类别:
Canada Research Chairs
Monolithic multi-junction III-V solar cells with optimal 1 eV subcell
具有最佳 1 eV 子电池的单片多结 III-V 太阳能电池
- 批准号:
506727-2017 - 财政年份:2019
- 资助金额:
$ 16.38万 - 项目类别:
Strategic Projects - Group
Mid-infrared integrated optoelectronics on silicon
硅基中红外集成光电器件
- 批准号:
508856-2017 - 财政年份:2019
- 资助金额:
$ 16.38万 - 项目类别:
Collaborative Research and Development Grants
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
- 批准号:
RGPIN-2017-06893 - 财政年份:2019
- 资助金额:
$ 16.38万 - 项目类别:
Discovery Grants Program - Individual
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