Mid-infrared integrated optoelectronics on silicon

硅基中红外集成光电器件

• 批准号: 508856-2017
• 负责人: Moutanabbir, Oussama
• 金额: $ 14.43万
• 依托单位: École Polytechnique de Montréal
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=694165
• 关键词: Mid; infrared; integrated; optoelectronics; silicon

The global acceleration of the information technology creates pressing needs for cost-effective broadband, high-density, and high-speed data interconnections for high-performance, energy-efficient signal processing and computing. This increasing demand will push the limits of the electrical interconnects by forcing the transmission distance to shrink, which limits architectures and exacerbates heat dissipation challenges as a result of forcing hot processors closer and closer together. Optical interconnections via silicon photonic platforms have recently been recognized as critical to overcome this technological bottleneck. One of the key components of silicon photonics is the integrated light source which serves as the electrical to optical converter. The on-chip light sources are crucial to achieve a higher integration density, higher scalability, and a better energy efficiency. However, the fact that Si is an indirect bandgap semiconductor and thus a poor light emitter has been a major hurdle facing the development of silicon photonics.To circumvent these limitations, this project focuses on developing group IV light sources by exploiting the emerging silicon-germanium-tin (SiGeSn) semiconductors. The project will capitalize on the fact that SiGeSn semiconductors can be grown on silicon wafers to achieve scalable, cost-effective Si photonic devices. The project will introduce these emerging semiconductors to design and implement three indispensable light emitting devices operating in the wavelength range of 2-5 µm, which provides a cost-effective alternative for inter-chip communications. Developing these mid-infrared devices will also create far-reaching new opportunities to interface electronics and biological and chemical sensing as important organic molecules and gases exhibit absorption bands in this wavelength range. This novel family of light emitting devices will benefit from the compatibility with complementary metal oxide semiconductor (CMOS) processing leading to a full exploitation of the current microelectronic and optoelectronic technologies.

信息技术的全球加速度为高性能，节能信号处理和计算提供了对具有成本效益的宽带，高密度和高速数据互连的紧迫需求。这种不断增长的需求将通过迫使传输距离缩小来推动电气互连的限制，从而限制了体系结构并加剧了散热耗散挑战，这是由于迫使热处理器越来越近近距离。通过硅光子平台的光学互连最近被认为是克服这种技术瓶颈的关键。硅光子学的关键组成部分之一是作为光转换器的集成光源。片上的光源对于达到更高的整合密度，更高的可伸缩性和更好的能源效率至关重要。但是，SI是间接的带隙半导体的事实，因此，较差的光发射器是硅光子学发展的主要障碍。为了避免这些限制，该项目着重于通过利用新出现的硅胶细胞（SigeSn）半多管来开发IV组光源。该项目将利用以下事实：Sigesn半导体可以在硅波上生长以实现可扩展的，具有成本效益的SI光子设备。该项目将介绍这些新兴的半导体，以设计和实施在2-5 µm波长范围内运行的三种必不可少的发光设备，这为芯片间通信提供了一种具有成本效益的替代方案。开发这些中红外设备还将创造出深远的新机会，以将电子和化学感知与重要的有机分子和气体接触到该波长范围内的滥用频带。这个新型的发光装置家族将受益于与完整的金属氧化物半导体（CMOS）处理的兼容性，从而完全利用当前的微电子和光电技术。