Mid-infrared integrated optoelectronics on silicon

硅基中红外集成光电器件

• 批准号: 508856-2017
• 负责人: Moutanabbir, Oussama
• 金额: $ 14.43万
• 依托单位: École Polytechnique de Montréal
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=694165
• 关键词: Mid; infrared; integrated; optoelectronics; silicon

The global acceleration of the information technology creates pressing needs for cost-effective broadband, high-density, and high-speed data interconnections for high-performance, energy-efficient signal processing and computing. This increasing demand will push the limits of the electrical interconnects by forcing the transmission distance to shrink, which limits architectures and exacerbates heat dissipation challenges as a result of forcing hot processors closer and closer together. Optical interconnections via silicon photonic platforms have recently been recognized as critical to overcome this technological bottleneck. One of the key components of silicon photonics is the integrated light source which serves as the electrical to optical converter. The on-chip light sources are crucial to achieve a higher integration density, higher scalability, and a better energy efficiency. However, the fact that Si is an indirect bandgap semiconductor and thus a poor light emitter has been a major hurdle facing the development of silicon photonics.To circumvent these limitations, this project focuses on developing group IV light sources by exploiting the emerging silicon-germanium-tin (SiGeSn) semiconductors. The project will capitalize on the fact that SiGeSn semiconductors can be grown on silicon wafers to achieve scalable, cost-effective Si photonic devices. The project will introduce these emerging semiconductors to design and implement three indispensable light emitting devices operating in the wavelength range of 2-5 µm, which provides a cost-effective alternative for inter-chip communications. Developing these mid-infrared devices will also create far-reaching new opportunities to interface electronics and biological and chemical sensing as important organic molecules and gases exhibit absorption bands in this wavelength range. This novel family of light emitting devices will benefit from the compatibility with complementary metal oxide semiconductor (CMOS) processing leading to a full exploitation of the current microelectronic and optoelectronic technologies.

全球信息技术的加速发展对高性能、高能效信号处理和计算的经济高效的宽带、高密度和高速数据互连提出了迫切的需求，这种不断增长的需求将突破电气互连的极限。通过迫使传输距离缩小，这限制了架构并加剧了散热挑战，因为通过硅光子平台的光学互连越来越紧密，最近被认为是克服这一技术瓶颈的关键之一。硅的成分光子学是作为电光转换器的集成光源，片上光源对于实现更高的集成密度、更高的可扩展性和更好的能效至关重要。然而，硅是一种间接带隙半导体。因此，较差的光发射器一直是硅光子学发展面临的主要障碍。为了规避这些限制，该项目重点通过利用新兴的硅锗锡（SiGeSn）半导体来开发 IV 族光源。该项目将利用 SiGeSn 半导体可以在硅晶圆上生长的事实来实现可扩展、经济高效的硅光子器件，该项目将引入这些新兴半导体来设计和实现在 2-5 波长范围内工作的三种不可或缺的发光器件。 µm 为芯片间通信提供了一种经济高效的替代方案，开发这些中红外设备还将为电子和生物和化学传感作为重要的有机物的接口创造影响深远的新机会。分子和气体在此波长范围内表现出吸收带，这种新颖的发光器件系列将受益于与互补金属氧化物半导体（CMOS）处理的兼容性，从而充分利用当前的微电子和光电子技术。