Physical vapour deposition of ferroelectric and multiferroic tunnel junctions

铁电和多铁隧道结的物理气相沉积

• 批准号: 506953-2017
• 负责人: Ruediger, Andreas
• 金额: $ 14.42万
• 依托单位: Institut national de la recherche scientifique
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=694162
• 关键词: Physical; vapour; deposition; ferroelectric; multiferroic

Ferroelectric tunnel junctions (FTJs) are the strongest contender to replace flash memory in integrated computer circuitry as they combine low-cost, non-volatility, small footprint, fast read- write cycles, low energy consumption, non-destructive readout and, since very recently, cmos-compatibility. The principle of operation is based on resistive switching between two conductive states that, in the case of FTJs are provided through the distinct state of spontaneous polarization. Intrinsically only a few unit cells thick, they are also suited for integration in crossbar arrays to combine features of memory and logic thus enabling innovative circuit architectures with tremendous potential for energy savings during processor operation. We have very recently demonstrated FTJs with proven CMOS compatibility, using only materials, HfZrO2, that are already part of cmos processing and keeping all process parameters, in particular the deposition temperature, within tolerances. With the proof of concept submitted for patent in collaboration with the industrial partner, the further development of these electronic functions relies for one on the optimization of process parameters for RF magnetron sputtering, a process to be readily adopted from laboratory to fabrication scale. For the other, parasitic switching effects, such as filamentary-mediated resistive switching need to be excluded and the most common failure mechanisms, e.g. point defects, will have to be identified. For this purpose, we collaborate with the electron microscopy and spectroscopy (PEEM) beam line at the Canadian Light Source, Canada's most advanced infrastructure for nanoscale chemical and structural imaging. In order to determine the full potential of these electronic tiles for given specifications (mainly the resistance ratio between on and off state), we collaborate with the NSERC/IBM Canadian industrial research chair to guide the integration towards the most promising circuit architecture. The main objective of this partnership is to develop an industrial main-frame compatible process for a novel non-volatile memory generation to outperform flash in terms of write speed, energy consumption and endurance.

铁电隧道连接（FTJ）是替代集成计算机电路中闪存的最强竞争者，因为它们结合了低成本，非挥发性，少量足迹，快速读写周期，低能消耗，非毁灭性读数，并且从最近开始，CMOS兼容。操作原理是基于两个导电状态之间的电阻切换，在FTJ的情况下，通过自发极化的不同状态提供。从本质上讲，它们也只有少数单元厚，它们也适合在横杆阵列中集成，以结合内存和逻辑的特征，从而使创新的电路体系结构具有巨大的潜力，可以在处理器操作过程中节省能源。我们最近已经证明了具有经过验证的CMOS兼容性的FTJ，仅使用材料HFZRO2，这些材料已经是CMOS处理的一部分，并保留了所有过程参数，尤其是在公差内的沉积温度。通过与工业合作伙伴合作提交的概念证明，这些电子功能的进一步开发依赖于对RF Magnetron溅射的过​​程优化的过程，这是从实验室到制造量表的易于采用的过程。另一方面，需要排除寄生的开关效应，例如丝状介导的电阻转换，最常见的故障机制，例如点缺陷，必须确定。为此，我们与加拿大光源（加拿大最先进的纳米级化学和结构成像基础设施）的电子显微镜和光谱（PEEM）光束线合作。为了确定这些电子瓷砖的全部潜力（主要是在状态和关闭状态之间的电阻比），我们与NSERC/IBM加拿大工业研究主席合作，指导集成到最有前途的电路体系结构。该伙伴关系的主要目的是开发一个新型的非易失性记忆产生的工业主框架过程，以在写速，能量消耗和耐力方面优于闪光。