Ultra high quality transition metal dichalcogenide synthesis by molecular beam epitaxy for integrated light emitting diodes and ion sensitive transistors

通过分子束外延合成超高质量过渡金属二硫属化物，用于集成发光二极管和离子敏感晶体管

• 批准号: 494154-2016
• 负责人: Szkopek, Thomas
• 金额: $ 13.19万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=642043
• 关键词: Ultra; quality; transition; metal; dichalcogenide

2-D materials are a new class of materials that exist as atomic monolayers, and which possess a wide range of useful physical properties. While graphene is the most well known of the 2-D materials, it is a conductor that is unsuitable for electronics, spurring a decade of research into the development of semiconducting 2-D materials. The transition metal dichalcogenides (TMDCs) and boron nitride (BN) are 2-D semiconductors, which can be fashioned into useful devices such as light emitting diodes and transistors. A grand challenge for the adoption of TMDCs and BN in the application areas of photonics and solid state sensing however, is the development of a manufacturing process for high quality material. We propose here to directly address this advanced manufacturing challenge at the intersection of nanotechnology and quantum materials. We will use molecular beam epitaxy (MBE) to develop a scalable manufacturing approach for ultra high quality 2-D materials, with the end goal of demonstrating: A) 1.3-1.65µm light emitting diodes suitable for telecommunications applications and B) ion sensing field effect transistors suitable for genome sequencing. The highest quality conventional semiconductor structures are grown by MBE, and we aim to harness the superior quality of MBE growth to address the manufacturing challenge faced by industry in adopting 2-D materials. Our team is composed of world reknown experts in MBE growth (Z. Mi), atomic resolution material analysis (G. Botton), and 2-D materials (T. Szkopek). We are partnered with CIS Scientific Inc., leading experts in chalcogenide based materials for electronics and optoelectronics. We are also partnered with NanoAcademic Technologies, leading experts in nanoscale device modelling, essential to the engineering optimization of device structures. This work will enable the development of a scalable manufacturing process for 2-D semiconductors, will train highly qualified personnel in next generation semiconductors, and will provide our Canadian corporate partners with economic opportunities that can be realized from an international leadership position in 2-D materials development.

二维材料是一类以原子单层形式存在的新型材料，具有广泛的有用物理特性，虽然石墨烯是最著名的二维材料，但它是一种不适合电子产品的导体。 ，推动了半导体二维材料开发的十年研究。过渡金属二硫属化物 (TMDC) 和氮化硼 (BN) 是可以成型的二维半导体。然而，在光子学和固态传感应用领域采用 TMDC 和 BN 的一个巨大挑战是开发高质量材料的制造工艺。为了解决纳米技术和量子材料交叉领域的这一先进制造挑战，我们将使用分子束外延 (MBE) 开发超高质量二维材料的可扩展制造方法，最终目标是演示：A)适用于电信应用的 1.3-1.65μm 发光二极管和适用于基因组测序的离子传感场效应晶体管 最高质量的传统半导体结构是通过 MBE 生长的，我们的目标是利用 MBE 生长的卓越质量来解决制造问题。我们的团队由 MBE 生长 (Z. Mi)、原子分辨率材料分析 (G. Botton) 和 2-D 材料 (T. Botton) 领域的世界知名专家组成。我们与 CIS Scientific Inc. 合作，该公司是电子和光电子领域硫族化物材料领域的领先专家。促进二维半导体可扩展制造工艺的开发，将培训下一代半导体领域的高素质人才，并将为我们的加拿大企业合作伙伴提供可通过国际领导地位实现的经济机会二维材料开发。