Contactless detection and analysis of electronic defects in CdZnTe

CdZnTe 中电子缺陷的非接触式检测与分析

• 批准号: 509497-2017
• 负责人: Tiedje, Thomas
• 金额: $ 1.82万
• 依托单位: University of Victoria
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=640388
• 关键词: Contactless; detection; analysis; electronic; defects

CdZnTe is an emerging semiconductor alloy used in high energy x-ray detectors for medical diagnostics andsecurity applications. The performance of the detectors depends on controlling the density of electronicallyactive defects which trap charge generated by absorbed x-rays and act as recombination centres. The density ofdefects is affected by the crystal growth process and post growth processing of the crystals in ways that are stillpoorly understood. In order to improve the quality of the detector material and to reduce the cost ofmanufacturing detectors it would be desirable to have a fast contactless method for quantifying the density ofdefects and their chemical origin as well as for spatial mapping defects. Variable temperaturephotoluminescence (PL) is a contactless technique that can potentially satisfy these requirements. PL issensitive to low densities of defects, can probe small areas and can provide chemical specificity through theemission spectrum. In this project we will explore the applicability of PL for the routine assessment of theelectronic properties of device quality CdZnTe.

CdZnTe 是一种新兴的半导体合金，用于医疗诊断和安全应用的高能 X 射线探测器。探测器的性能取决于控制电子活性缺陷的密度，这些缺陷捕获吸收的 X 射线产生的电荷并充当复合中心。缺陷密度受到晶体生长过程和晶体生长后处理的影响，但目前人们还知之甚少。为了提高探测器材料的质量并降低制造探测器的成本，需要有一种快速非接触方法来量化缺陷密度及其化学起源以及空间映射缺陷。变温光致发光（PL）是一种非接触式技术，有可能满足这些要求。 PL 对低密度缺陷敏感，可以探测小区域，并可以通过发射光谱提供化学特异性。在本项目中，我们将探索 PL 在器件质量 CdZnTe 电子性能常规评估中的适用性。