Band Engineering of Dirac Materials for Device Applications

用于设备应用的狄拉克材料能带工程

基本信息

批准号：
RGPIN-2016-04793
负责人：
Chang, GapSoo
金额：
$ 1.6万
依托单位：
University of Saskatchewan
依托单位国家：
加拿大
项目类别：
Discovery Grants Program - Individual
财政年份：
2016
资助国家：
加拿大
起止时间：
2016-01-01 至 2017-12-31
项目状态：
已结题

来源：
https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=615304
关键词：
Band Engineering Dirac Materials Device

项目摘要

This research proposes to develop a scalable method with less complexity to modulate the band structure of two dimensional (2D) Dirac materials including graphene, silicene, and transition metal dichalcogenides for applications in electronics and energy technologies. Patterned decoration of 2D Dirac materials with metallic nanostructures or polymer molecules will be explored as an effective mean to tune the energy band gap in selected areas of 2D Dirac systems while preserving their intrinsic electrical and optical properties. The characterization of detailed electronic structure for the band-engineered materials will be conducted using X-ray absorption and emission spectroscopy at the Canadian Light Source to shed light on the mechanism behind the opening of band gap in 2D materials by surface modification. These band-engineered 2D Dirac materials will ultimately be used to produce high performance transistor and solar cell devices. The quantitative analysis of the device operation parameters (for example, carrier mobility and on/off ration for transistor devices and energy conversion efficiency for solar cell devices) with respect to the surface coverage and type of decorating materials will be conducted in order to achieve the optimized device performance. The following objectives will be pursued as main directions toward semiconductor Dirac electronics: a) investigation of the effect of metallic nanostructure formation (and followed by oxidation if necessary) and organic material decoration on the band structure of group-IV 2D Dirac materials (graphene and silicene) and transition metal dichalcogenide (MoS2), b) design and fabrication of electronic and photovoltaic device architectures using the selected-area band-engineered materials, and c) optimization of the current-voltage (I-V) characteristics of devices. This research program is of great importance to allied research field and industries in Canada as it will not only advance our fundamental knowledge of relativistic quantum mechanical phenomena in low dimensional systems but also help people overcome limitations in current semiconductor technology and prepare for post-silicon electronics. This research is also important to Canada as it involves information and communication technologies (ICT), nanotechnology, and energy technologies which are among the areas of R&D priority under Canada’s Science, Technology and Innovation Strategy.

这项研究提案要开发一种具有较低复杂性的可扩展方法，以调节二维（2D）狄拉克材料的带结构，包括石墨烯，硅和过渡金属二北核化合物，以应用于电子和能量技术。具有金属纳米结构或聚合物分子的2D狄拉克材料的图案装饰将被探讨为有效的手段，以调整2D Dirac系统选定区域的能量带隙，同时保留其内在的电气和光学特性。将使用X射线抽象和加拿大光源的发射光谱进行详细的电子结构的表征，以通过表面修饰在2D材料中打开带隙的机理。这些频带工程的2D Dirac材料最终将用于生产高性能晶体管和太阳能电池设备。相对于表面覆盖范围和装饰材料的类型，以实现优化的设备性能，对设备操作参数的定量分析（例如，晶体管设备的载体迁移率以及太阳能电池设备的能量转换效率）的定量分析。以下对象将作为指向半导体dirac电子的主要方向：a）金属纳米结构形成的影响（如有必要，然后进行氧化）以及有机材料对组合型元素结构（IV 2D DIRAC材料（石墨烯和硅胶）的频带结构，以及使用Election and Insuct和Pontuction和Pontuction-election和Pontuction，B）设计和Potchication，B）设计和制造，频带工程材料和c）优化设备的电流电压（I-V）特性。该研究计划对加拿大的盟军研究领域和行业至关重要，因为它不仅可以提高我们对低维系统中相对论量子机械现象的基本知识，而且还可以帮助人们克服当前半导体技术的局限性，并为后硅电气技术做准备。这项研究对加拿大也很重要，因为它涉及信息和通信技术（ICT），纳米技术和能源技术，这些技术是加拿大科学，技术和创新策略下的研发优先级领域之一。