Extremely low current measurements of semiconductor heterostructures and nanostructures at cryogenic temperatures

在低温下对半导体异质结构和纳米结构进行极低电流测量

• 批准号: 406609-2011
• 负责人: Mooney, Patricia
• 金额: $ 10.93万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Research Tools and Instruments - Category 1 (<$150,000)
• 财政年份: 2010
• 资助国家: 加拿大
• 起止时间: 2010-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=472519
• 关键词: Extremely; low; current; measurements; semiconductor

Crystalline semiconductors are the foundation of telecommunications, computing, and many other technologies employed in all aspects of contemporary life. Their physical characteristics are determined both by the properties of the host crystal and by the presence of impurities and crystalline defects. The identification and control of these defects determines the commercial viability of a given new material or structure. Combined with control of growth and processing factors, the influence of crystalline defects and impurities at surfaces, interfaces and in the bulk semiconductor can be distinguished and enhanced or eliminated. A new capability to make extremely sensitive electrical measurements at temperatures below 80K is needed to extend the energy range of carrier trapping experiments and also to investigate the effects of surfaces and interfaces on transport properties in novel nanostructures, including nanowires. We request funding to acquire a closed-cycle He cryostat for electrical measurements of a variety of semiconductors and nanostructures in the temperature range 4-300K. In addition, we propose to purchase an electrical measurement system capable of detecting electrical currents as low as 10 to the power -15 Amperes (1fA), required for studies of their electronic properties.

晶体半导体是电信、计算以及当代生活各个方面所采用的许多其他技术的基础。它们的物理特性由主体晶体的性质以及杂质和晶体缺陷的存在决定。这些缺陷的识别和控制决定了给定新材料或结构的商业可行性。结合生长和加工因素的控制，可以区分并增强或消除表面、界面和体半导体中的晶体缺陷和杂质的影响。需要一种在低于 80K 的温度下进行极其灵敏的电学测量的新能力，以扩展载流子捕获实验的能量范围，并研究表面和界面对新型纳米结构（包括纳米线）传输特性的影响。我们请求资金购买一台闭环 He 低温恒温器，用于在 4-300K 温度范围内对各种半导体和纳米结构进行电气测量。此外，我们建议购买能够检测低至 10 次方 -15 安培 (1fA) 电流的电气测量系统，这是研究其电子特性所需的。