Understanding 2D material memristors by atomic resolution imaging

通过原子分辨率成像了解二维材料忆阻器

• 批准号: 2737050
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2737050
• 关键词: Understanding; 2D; material; memristors; atomic

Resistive memory (ReRAM, also known as memristors) are a memory where the on and off states correspond to different resistances toggled by an applied potential. They are an emerging device of interest in 'beyond Moore' electronics, with potential applications in high-speed memory and neuromorphic 'brain-like' computing. New 2D materials, like monolayer MoS2, can now be used to make these devices atomically thin. However, there remains significant ambiguity over the atomic mechanisms behind this resistive switching property. Understanding this process at the fundamental atomic level would allow us to engineer better devices. This PhD project will use the state-of-the-art atomic resolution imaging facilities available at Warwick University to diagnose these underpinning mechanisms and thus inform the design of next-generation electronic devices. The student will conduct transmission electron microscopy (TEM) imaging of 2D material ReRAM devices while they are being operated inside the microscope. These operando experiments will directly reveal the atomic mechanisms that occur inside an operational memristor. The student will benefit from training in 2D material preparation and handling, semiconductor device fabrication, and TEM imaging techniques, as well as international collaboration with partners in Korea.

电阻式存储器（ReRAM，也称为忆阻器）是一种存储器，其开和关状态对应于由施加的电位切换的不同电阻。它们是“超越摩尔”电子学领域感兴趣的新兴设备，在高速存储器和神经形态“类脑”计算方面具有潜在应用。新的 2D 材料，如单层 MoS2，现在可用于使这些设备变得原子薄。然而，这种电阻开关特性背后的原子机制仍然存在很大的模糊性。从基本原子层面理解这一过程将使我们能够设计出更好的设备。该博士项目将使用华威大学最先进的原子分辨率成像设施来诊断这些基础机制，从而为下一代电子设备的设计提供信息。学生将对在显微镜内操作的 2D 材料 ReRAM 器件进行透射电子显微镜 (TEM) 成像。这些操作实验将直接揭示可操作忆阻器内部发生的原子机制。学生将受益于 2D 材料制备和处理、半导体器件制造和 TEM 成像技术以及与韩国合作伙伴的国际合作方面的培训。