Aerosol-Assisted Chemical Vapour Deposition of Inorganic Functional Materials

无机功能材料的气溶胶辅助化学气相沉积

• 批准号: 2274775
• 金额: --
• 依托单位: University of Bath
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2274775
• 关键词: Aerosol; Assisted; Chemical; Vapour; Deposition

ABSTRACT: Continued success of the electronic and energy sectors is driven by technological advances in the semiconductor industry. In layered combination, electron donating (n-type) and electron accepting (p-type) semiconductor materials form heterojunctions, which are the bedrock of transistor and photovoltaic devices. The miniaturisation of such devices has prompted a recent shift away from classical silicon-based materials, of which thin films are challenging to fabricate. As an alternative, the capabilities of both organic polymers and metal-based materials have been investigated, with the latter being favoured for their durability. Consequently, the fabrication of intricate layered architectures comprising inorganic semiconductors is of growing importance. Aerosol-assisted chemical vapour deposition (AACVD) is a promising fabrication technique. Aerosolisation of precursor solutions mitigates the volatility required for typical chemical vapour deposition methods, broadening the range of possible deposition precursors available.It is proposed to survey the thermal properties of and thin films produced from, a series of metal chalcogenide molecular precursors for AACVD; thus to redress the relative lack in available precursors for formulation of inorganic p-type semiconductors. Initial attention will be focused upon the formulation of group 15 chalcogenide systems (M2X3, M = As, Sb, Bi and X = S, Se, Te), which are currently underdeveloped. More specifically, it is proposed initially to examine group 15 molecular complexes with xanthate-derived ligands, the deposition mechanism of which has been pre-characterised. The work may expand to other metals, for example tin or zinc. The aim is to yield a series of precursor chemicals viable for commercial AACVD scaleup,to assist the construction of both constituents of an inorganic heterojunction. Future work can interrogate parameters controlling aerosol-mediated deposition, probing the influence of droplet size and solvent on film morphology.

摘要：电子和能源部门的持续成功是由半导体行业的技术进步驱动的。在分层组合中，电子捐赠（n型）和电子接受（P型）半导体材料形成异质界面，它们是晶体管和光伏设备的基岩。这种设备的微型化促使最近从基于硅的材料转变了，其中薄膜构成了挑战。另外，已经研究了有机聚合物和金属材料的能力，后者因其耐用性而受到青睐。因此，包含无机半导体的复杂分层体系结构的制造越来越重要。气溶胶辅助化学蒸气沉积（AACVD）是一种有前途的制造技术。前体溶液的气化降低了典型的化学蒸气沉积方法所需的波动性，扩大了可用的沉积前体的范围。它提议调查由AACVD的一系列金属金属猫源性膜产生的热膜和薄膜的热性质；因此，为了纠正可用前体的相对缺乏，用于制定无机P型半导体。最初的注意力将集中在目前尚不开发的15组粉红色化合物系统（M2X3，M = AS，SB，BI和X = S，SE，TE）的制定上。更具体地说，最初提出的是检查与黄铁矿衍生的配体的15组分子复合​​物，其沉积机理已被预先介绍。该工作可能会扩展到其他金属，例如锡或锌。目的是产生一系列适合商业AACVD量表的前体化学物质，以帮助建造无机异质结的两种成分。未来的工作可以询问控制气溶胶介导的沉积的参数，从而探测液滴大小和溶剂对膜形态的影响。