Design, fabrication and characterisation of arrays of low-voltage, non-volatile, III-V memories

低压非易失性 III-V 存储器阵列的设计、制造和表征

• 批准号: 1959804
• 金额: --
• 依托单位: Lancaster University
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1959804
• 关键词: Design; fabrication; characterisation; arrays; low

Static random access memory (SRAM), dynamic random access memory (DRAM) and Flash have complementary characteristics that make them well suited to their specialised roles in cache, active memory and data storage, respectively. Nevertheless, the concept of a 'universal memory' that combines the best features of each, i.e. fast, low-voltage, cheap, non-volatile, non-destructive read and high endurance has been a long-standing aspiration of the industrial and academic research communities. This project will follow on from very recent work in which the operation of large-scale (10 micron feature size) non-volatile III-V memory cells with non-destructive read was demonstrated at room-temperature. The objective will be to assess the suitability of the memory cells for implementation in different architectures (e.g. NAND Flash, NOR Flash and RAM), and to design, fabricate and characterise small arrays (2 x 2 and 4 x 4) of large-scale (10 micron feature size) memory cells.

静态随机访问存储器（SRAM），动态随机访问存储器（DRAM）和Flash具有互补的特征，使其非常适合其在缓存，活动内存和数据存储中的专业角色。然而，结合了每个人的最佳特征的“通用记忆”的概念，即快速，低压，便宜，非挥发性，无损的阅读和高耐力一直是工业和学术研究社区的长期愿望。该项目将从最近的工作中进行，其中在室温下证明了具有非破坏性读取的大规模（10微米特征大小）非挥发性III-V记忆细胞的运行。目的是评估记忆单元在不同体系结构（例如NAND FLASH，NOR FLASH和RAM）中实现的适用性，并设计，制造和表征小阵列（2 x 2和4 x 4）的大型（10微米特征大小）存储单元。