Design and construction of a large-area hot filament reactor suitable for deposition of diamond films directly onto GaN substrates

设计和建造适合将金刚石薄膜直接沉积到 GaN 衬底上的大面积热丝反应器

• 批准号: 1942608
• 金额: --
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1942608
• 关键词: Design; construction; large; area; hot

This PhD is aligned with the Program grant (PI Martin Kuball, Physics) with the aim of developing diamond-on-GaN technology for next generation power devices. It is funded by the University of Bristol's EPSRC DTA quota as part of their commitment to support the overall Programme grant.The student will work alongside a PDRA (whose remit is to develop new technologies to grow diamond directly on to GaN substrates), and develop methods and procedures to scale up this technology from substrates that are ~1sq.cm in size to 6"-diameter wafers common in the semiconductor industry. The student's main goal will be to modify an existing deposition reactor such that it can accept 6"-wafers, and to redesign the filament and power system such that diamond films will be deposited uniformly across these wafers.Some of the project will also involve scaling up of the seeding process, which currently uses a home-built electrospray apparatus. This will also be modified for larger-area substrates. Some preliminary seeding a deposition experiments will be undertaken on a range of novel substrates and materials, such as black Si needles, to fully understand the operating parameters.The student will be trained on various characterisation facilities, such as SEM, Raman, 4-point probe, as well as vacuum engineering.

该博士与计划赠款（Pi Martin Kuball，Physics）保持一致，目的是为下一代电力设备开发钻石技术。 It is funded by the University of Bristol's EPSRC DTA quota as part of their commitment to support the overall Programme grant.The student will work alongside a PDRA (whose remit is to develop new technologies to grow diamond directly on to GaN substrates), and develop methods and procedures to scale up this technology from substrates that are ~1sq.cm in size to 6"-diameter wafers common in the semiconductor industry. The学生的主要目标是修改现有的沉积反应器，以便它可以接受6英寸的武器，并重新设计灯丝和电力系统，以使钻石膜将在这些薄片中均匀存放。该项目的某些项目还将涉及扩展播种过程，该过程使用了目前使用的家用电子设备。这也将针对大区域的基材进行修改。一些初步的播种实验将在一系列新型的底物和材料（例如黑色SI针）上进行，以充分理解工作参数。学生将接受各种表征设施的培训，例如SEM，Raman，4点探测器，以及真空工程。