Pnictogen-based semiconductors for Harvesting EneRgy from Ambient Light to power autonomous Devices (HERALD)
用于从环境光中收集能量为自主设备供电的基于 Pnictogen 的半导体 (HERALD)
基本信息
- 批准号:EP/X022900/1
- 负责人:
- 金额:$ 164.68万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2022
- 资助国家:英国
- 起止时间:2022 至 无数据
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
HERALD aims to instigate a step-change in how smart devices are powered by developing new classes of pnictogen-based semiconductors to more efficiently collect the widely-available energy from lighting inside buildings. Such energy can be renewably harvested with indoor photovoltaics (IPV), which is highly appealing for powering the billions of autonomous smart devices driving the fourth industrial revolution. However, industry-standard IPV (hydrogenated amorphous silicon; a-Si:H) have efficiencies up to only ~20%, with most commercial devices <10% efficient.HERALD will develop IPV from novel classes of rudorffites and chalcohalides, which have potential to reach >48% efficiency under indoor lighting. These are low-toxicity, high-stability materials based on the pnictogens bismuth and antimony, and their considerable potential for indoor light harvesting is just starting to emerge. HERALD will transform these novel compounds into leading IPV using a hierarchical characterisation approach, from the macro- to near-atomic-scale. Along the way, fundamental understanding will be gained to learn what the performance-limiting factors are and how they can be systematically mitigated. The endpoint will be high-performing, durable test devices with low environmental impact. The materials will be rapidly grown at scale using a novel plasma-spray technique, and the IPV prototyped in commercial smart devices.The pnictogen-based IPV developed can have a transformative impact on smart devices by decreasing their reliance on being powered only by batteries, which need to be regularly replaced, creating significant waste. The new IPV can be deployed without harming the environment and will harvest more power than a-Si:H IPV to sustain smart devices with more advanced capabilities. The pioneering development of pnictogen-based semiconductors will also push them forward for numerous PV, from clean solar fuel production to radiation detection for medical imaging.
HERALD 旨在通过开发新型磷元素半导体来推动智能设备的供电方式发生重大变化,以更有效地从建筑物内的照明中收集广泛可用的能源。这种能源可以通过室内光伏(IPV)进行可再生收集,这对于为推动第四次工业革命的数十亿自主智能设备提供动力非常有吸引力。然而,行业标准 IPV(氢化非晶硅;a-Si:H)的效率仅为 20% 左右,大多数商业设备的效率<10%。HERALD 将从新型红铜矿和硫卤化物中开发 IPV,这些产品具有潜力在室内照明下达到 >48% 的效率。这些是基于产烟剂铋和锑的低毒、高稳定性材料,它们在室内光收集方面的巨大潜力刚刚开始显现。 HERALD 将使用从宏观到近原子尺度的分层表征方法将这些新型化合物转化为领先的 IPV。在此过程中,我们将获得基本的了解,以了解性能限制因素是什么以及如何系统地缓解这些因素。终点将是高性能、耐用且对环境影响较小的测试设备。这些材料将使用新型等离子喷涂技术快速大规模生长,并且IPV将在商业智能设备中原型化。开发的基于pnictogen的IPV可以通过减少智能设备对仅由电池供电的依赖来对智能设备产生变革性影响,需要定期更换,造成大量浪费。新的IPV可以在不损害环境的情况下部署,并且将比a-Si:H IPV获得更多的电力,以支持具有更先进功能的智能设备。基于磷元素的半导体的开创性发展也将推动它们在众多光伏领域的发展,从清洁太阳能燃料生产到医学成像辐射检测。
项目成果
期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Air-stable bismuth sulfobromide (BiSBr) visible-light absorbers: optoelectronic properties and potential for energy harvesting
空气稳定的磺溴化铋 (BiSBr) 可见光吸收剂:光电特性和能量收集潜力
- DOI:http://dx.10.1039/d3ta04491b
- 发表时间:2023
- 期刊:
- 影响因子:11.9
- 作者:Guo X
- 通讯作者:Guo X
Halide Perovskites and their Derivatives for Efficient, High-Resolution Direct Radiation Detection: Design Strategies and Applications
用于高效、高分辨率直接辐射检测的卤化物钙钛矿及其衍生物:设计策略和应用
- DOI:http://dx.10.1002/adma.202304523
- 发表时间:2023
- 期刊:
- 影响因子:29.4
- 作者:Dudipala K
- 通讯作者:Dudipala K
Wide-Bandgap Perovskite-Inspired Materials: Defect-Driven Challenges for High-Performance Optoelectronics
宽带隙钙钛矿材料:高性能光电器件面临的缺陷驱动挑战
- DOI:http://dx.10.1002/adfm.202307441
- 发表时间:2023
- 期刊:
- 影响因子:19
- 作者:Grandhi G
- 通讯作者:Grandhi G
Progress and applications of (Cu-)Ag-Bi-I semiconductors, and their derivatives, as next-generation lead-free materials for photovoltaics, detectors and memristors
(Cu-)Ag-Bi-I半导体及其衍生物作为下一代光伏、探测器和忆阻器无铅材料的进展和应用
- DOI:http://dx.10.1177/09506608231213065
- 发表时间:2024
- 期刊:
- 影响因子:16.1
- 作者:Zhu H
- 通讯作者:Zhu H
Data-Driven Controlled Synthesis of Oriented Quasi-Spherical CsPbBr3 Perovskite Materials.
数据驱动的定向准球形 CsPbBr3 钙钛矿材料的受控合成。
- DOI:http://dx.10.1002/anie.202319480
- 发表时间:2024
- 期刊:
- 影响因子:0
- 作者:Liu S
- 通讯作者:Liu S
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Robert L. Z. Hoye其他文献
Structural and spectroscopic studies of a nanostructured silicon–perovskite interface
- DOI:
10.1039/c9nr09622a - 发表时间:
2020-01 - 期刊:
- 影响因子:6.7
- 作者:
Roberto Gonzalez-Rodriguez;Viviana C. P. Costa;Géraud Delport;Kyle Frohna;Robert L. Z. Hoye;Samuel D. Stranks;Jeffery L. Coffer - 通讯作者:
Jeffery L. Coffer
A comparative study on the impact of preparation technique on the minority carrier lifetime of Cu2O absorber
制备工艺对Cu2O吸收体少子寿命影响的对比研究
- DOI:
10.1007/s10853-024-09652-y - 发表时间:
2024-04-23 - 期刊:
- 影响因子:4.5
- 作者:
Chithira Venugopalan Kartha;Yi‐Teng Huang;Theodoros Dimopoulos;S. Edinger;Dominique Muller;S. Roques;J. Bartringer;Abdelilah Slaoui;Robert L. Z. Hoye;T. Fix - 通讯作者:
T. Fix
Photoelectrochemical water splitting strongly enhanced in fast-grown ZnO nanotree and nanocluster structures
- DOI:
10.1039/c6ta02788a - 发表时间:
2016-06 - 期刊:
- 影响因子:11.9
- 作者:
Xin Ren;Abhijeet Sangle;Siyuan Zhang;Shuai Yuan;Yin Zhao;Liyi Shi;Robert L. Z. Hoye;Seungho Cho;Dongdong Li;Judith L. MacManus-Driscoll - 通讯作者:
Judith L. MacManus-Driscoll
Interfacial defect healing of In2S3/Sb2(S,Se)3heterojunction solar cells with a novel wide-bandgap InOCl passivator
- DOI:
10.1039/d3ta01736b - 发表时间:
2023-07 - 期刊:
- 影响因子:11.9
- 作者:
Changxue Wang;Dongdong Li;Xiaoli Mao;Lei Wan;Zhen Cheng;Jun Zhu;Robert L. Z. Hoye;Ru Zhou - 通讯作者:
Ru Zhou
Improved photocatalytic activity of TiO2nanoparticles through nitrogen and phosphorus co-doped carbon quantum dots: an experimental and theoretical study
- DOI:
10.1039/d2cp01405j - 发表时间:
2022-06 - 期刊:
- 影响因子:3.3
- 作者:
H. J. Yashwanth;Sachin R. Rondiya;Nelson Y. Dzade;Robert L. Z. Hoye;Ram J. Choudhary;Deodatta M. Phase;Sanjay D. Dhole;K. Hareesh - 通讯作者:
K. Hareesh
Robert L. Z. Hoye的其他文献
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{{ truncateString('Robert L. Z. Hoye', 18)}}的其他基金
ECCS-EPSRC: A new generation of cost-effective, scalable and stable radiation detectors with ultrahigh detectivity
ECCS-EPSRC:具有超高探测率的新一代经济高效、可扩展且稳定的辐射探测器
- 批准号:
EP/Y032942/1 - 财政年份:2024
- 资助金额:
$ 164.68万 - 项目类别:
Research Grant
Instilling Defect-Tolerance in ABZ2 Photovoltaic Materials
向 ABZ2 光伏材料灌输缺陷容限
- 批准号:
EP/V014498/2 - 财政年份:2023
- 资助金额:
$ 164.68万 - 项目类别:
Research Grant
Instilling Defect-Tolerance in ABZ2 Photovoltaic Materials
向 ABZ2 光伏材料灌输缺陷容限
- 批准号:
EP/V014498/1 - 财政年份:2021
- 资助金额:
$ 164.68万 - 项目类别:
Research Grant
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