Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility

支撑设备增强 EPSRC 国家外延设施的半导体表征能力

• 批准号: EP/X034674/1
• 负责人: Jon Heffernan
• 金额: $ 61.52万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FX034674%2F1
• 关键词: Underpinning; Equipment; Enhancing; Semiconductor; Characterisation

The National Epitaxy Facility requires equipment to upgrade its scientific capabilities and to improve the efficiency of the facility in meeting user needs.The facility will install a new cryostat that will allow the mounting of full epitaxial wafers up to 3" in diameter. The cryostat will be combined with existing equipment in the facility to create a low temperature Photoluminescence (PL) mapping system capable of producing PL maps over the full 3" wafer, with spatial resolution down to the micron level. In addition, we will install a time-resolved photon counting system to allow for both CW and time-resolved mapping of emission characteristics over full wafers.The equipment will improve the efficiency of the epitaxy service provided by the National Epitaxy Facility by increasing the range and quality of characterisation data available to us and allowing cryogenic wafer mapping to be done in a single run, instead of multiple runs on small cleaved samples.New scientific capabilities will also be enabled , particularly in areas such as manufacturing research where detailed information on spatial variations across epitaxial wafers is of critical importance.

The National Epitaxy Facility requires equipment to upgrade its scientific capabilities and to improve the efficiency of the facility in meeting user needs.The facility will install a new cryostat that will allow the mounting of full epitaxial wafers up to 3" in diameter. The cryostat will be combined with existing equipment in the facility to create a low temperature Photoluminescence (PL) mapping system capable of producing PL maps over the full 3" wafer, with空间分辨率降至微米水平。此外，我们还将安装一个时间分辨的光子计数系统，以允许在全瓦金船上对排放特性的映射和时间分辨的映射。设备将提高国家外交设施提供的外交服务的效率，通过增加cryogen thame的表征范围，而不是在单个型号上，而不是在单个型号上增加单个型号，而不是单个型号。还将启用，尤其是在制造研究等领域，在该领域中，有关外延晶片之间空间变化的详细信息至关重要。