Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility

支撑设备增强 EPSRC 国家外延设施的半导体表征能力

• 批准号: EP/X034674/1
• 负责人: Jon Heffernan
• 金额: $ 61.52万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FX034674%2F1
• 关键词: Underpinning; Equipment; Enhancing; Semiconductor; Characterisation

The National Epitaxy Facility requires equipment to upgrade its scientific capabilities and to improve the efficiency of the facility in meeting user needs.The facility will install a new cryostat that will allow the mounting of full epitaxial wafers up to 3" in diameter. The cryostat will be combined with existing equipment in the facility to create a low temperature Photoluminescence (PL) mapping system capable of producing PL maps over the full 3" wafer, with spatial resolution down to the micron level. In addition, we will install a time-resolved photon counting system to allow for both CW and time-resolved mapping of emission characteristics over full wafers.The equipment will improve the efficiency of the epitaxy service provided by the National Epitaxy Facility by increasing the range and quality of characterisation data available to us and allowing cryogenic wafer mapping to be done in a single run, instead of multiple runs on small cleaved samples.New scientific capabilities will also be enabled , particularly in areas such as manufacturing research where detailed information on spatial variations across epitaxial wafers is of critical importance.

全国外部外观设施需要设备来升级其科学能力并提高该设施在满足用户需求方面的效率。该设施将安装新的低温恒温器，以允许直径长达3英寸的完整外延晶片。与设施中的现有设备结合使用，以创建低温光致发光（PL）映射系统，能够在整个3“晶圆上产生PL地图，并将空间分辨率降至微米级。此外，我们还将安装一个时间分辨的光子计数系统，以允许在完整晶片上使用排放特性的CW和时间分辨的映射。设备将通过增加国家外交设施提供的外观服务的效率来提高范围和表征数据的质量质量，并允许在一次运行中进行低温晶片映射，而不是在小裂片样品上进行多次运行。新的科学能力也将启用，尤其是在诸如制造研究等领域，详细信息有关空间的详细信息跨外延晶圆的变化至关重要。