Near infrared single photon detection using Ge-on-Si heterostructures

使用 Ge-on-Si 异质结构进行近红外单光子检测

• 批准号: EP/H052089/1
• 负责人: Gerald Buller
• 金额: $ 46.87万
• 依托单位: Heriot-Watt University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2011
• 资助国家: 英国
• 起止时间: 2011 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH052089%2F1
• 关键词: Near; infrared; single; photon; detection

Semiconductor-based photon-counting detectors have risen to prominence in the last decade as new application areas have emerged, such as quantum information processing, and in particular quantum cryptography. These photon-counting detectors - mainly fabricated from silicon - have also taken over from photomultipliers in a number of laboratory applications where their room temperature operation, fast timing, small footprint and low power consumption have proved advantageous in a host of applications, for example fluorescence lifetime imaging. New photon-counting applications areas in ground-based, airborne and even satellite-borne laser-induced reflection techniques have been developed in recent years (eg for detection of trace gas concentrations), as well as significant developments in low-power optical imaging and high-resolution depth imaging. In the near-infrared spectral region - where silicon-based detectors are highly inefficient - there remain substantial issues with available single-photon avalanche diode (SPAD) detectors. Their performance deteriorates due to the high noise levels associated with thermal excitation of carriers across the relatively narrow bandgaps, as well as the effects of mid-gap trapping centres causing the deleterious effects of afterpulsing, further contributing to detector noise levels. This project aims to establish a new class of germanium/silicon SPADs that will operate efficiently in the near-infrared, particularly at the strategically important telecommunications wavebands, and combine the advantages of low-noise Si single-photon avalanche multiplication with the infra-red sensing capability of Ge. This new class of detectors will take advantage of recent advances in epitaxial Ge/Si growth and be fabricated in conjunction with the recently-created UK Silicon Photonics consortium (UKSP), which offers world-class device growth and fabrication facilities. The detectors will be validated on existing state-of-the-art testbeds for quantum key distribution and time-of-flight ranging/depth imaging. The project leverages the combined expertise and facilities of existing UK Silicon Photonics consortium to do additional and new work, thus adding value to that consortium.

随着新的应用领域的出现，例如量子信息处理，特别是量子密码学，基于半导体的光子计数检测器已在过去十年中提高。这些光子计数检测器（主要由硅制造）也从光电培养基中取代了许多实验室应用，在许多实验室应用中，它们的室温运行，快速的时机，较小的足迹和低功耗在许多应用中已证明是有利的，例如荧光寿命成像。近年来已经开发了基于地面，机载甚至卫星激光诱导的反射技术的新的光子计数应用领域（例如，用于检测痕量气体浓度），以及低功率光学成像和高分辨率深度成像的重要发展。在近红外光谱区域（基于硅的探测器的高效效率低下），可用的单光子雪崩二极管（SPAD）探测器仍然存在实质性问题。它们的性能由于与载体在相对狭窄的带隙中的热激发相关的高噪声水平以及中间隙捕获中心的影响而导致后螺栓的有害作用的影响，这进一步促进了检测器噪声水平，因此它们的性能恶化。该项目旨在建立一类新的锗/硅蜘蛛，这些葡萄球菌将在近红外有效运行，尤其是在具有战略意义的电信波段中，并将低噪声Si Si Si si单光雪崩乘积的优势与GE的Infra Red-Red sensing能力相结合。这类新的探测器将利用外在GE/SI增长的最新进展，并与最近创建的UK Silicon Photonics Consortium（UKSP）一起制造，该财团（UKSP）提供了世界一流的设备增长和制造设施。探测器将在现有的最新测试台上进行验证，用于量子密钥分布和飞行时间/深度成像。该项目利用了现有的英国硅光子企业联盟的联合专业知识和设施来进行额外的工作，从而为该财团增加了价值。

项目成果

Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm

• DOI: 10.1109/ted.2013.2282712
• 发表时间: 2013-10
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: R. Warburton;G. Intermite;M. Myronov;P. Allred;D. Leadley;K. Gallacher;D. Paul;N. Pilgrim;L. Lever;Z. Ikonić;R. Kelsall;E. Huante-Ceron;A. Knights;G. Buller

Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

用于单光子雪崩二极管应用的厚硅基硅结构的外延生长优化

• DOI: 10.1109/istdm.2014.6874639
• 发表时间: 2014
• 作者: Allred P