INTEGRATED CDTE/CDS PHOTODIODES ON SCINTILLATORS

闪烁体上的集成 CDTE/CDS 光电二极管

• 批准号: 2458142
• 负责人: HARVEY B SERREZE
• 金额: $ 34.37万
• 依托单位: SPIRE CORPORATION
• 依托单位国家: 美国
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-07-01 至 1998-07-31
• 项目状态: 已结题
• 来源: https://reporter.nih.gov/project-details/2458142
• 关键词: X ray; biomedical equipment development; cadmium; clinical biomedical equipment; computed axial tomography; image enhancement; material; radiation detector; scintillation counter; silicon; solar radiation; tellurium

Spire proposes to develop advanced detector arrays for X-ray computed tomography by monolithically integrating CdTe photodiodes on scintillators. Due to reduced optical loss at the photodiode/scintillator interface and a better spectral match to the scintillator emission wavelength, this new detector promises improved signal compared to X-ray detectors using mechanically-stacked silicon-on-scintillator photodiodes. In addition, the cost of CdTe detectors will be substantially lower because we will use low-cost, thin-film, manufacturing technology and will reduce assembly complexity by obviating the need for precise stacking of photodiodes on the scintillators. In Phase I, we demonstrated single element integrated X-ray detectors with improved performance over conventional Si photodiodes. High sensitivity X- ray detectors were fabricated by (a) gluing CdTe-photodiodes-on-glass to a CdWO4 scintillator, and (b) depositing CdTe photodiodes directly on CdWO4 by thermal evaporation. In both cases, the CdTe photodiode exhibited higher responsivity in the 500 to 800 nm range, than currently-used Si photodiodes. X-ray detectors fabricated from these photodiodes showed better performance than mechanically- stacked Si photodiode-on- scintillator X-ray detectors. Advancing the single element technology whose feasibility was shown in Phase I to a demonstration of commercially viable arrays is the objective of Phase II. To achieve this objective, detector performance will be further advanced, first by perfecting the processes employed to fabricate single-element detectors, then by marrying these processes with the optimized design to construct a new class of greatly improved detectors. Spire will produce monolithically integrated arrays suitable for tomography, and work closely with XCT manufacturers and users to assure that the array meets their needs and can be integrated into their products. PROPOSED COMMERCIAL APPLICATION: X-ray detectors with enhanced signal and low-cost will find applications in computed tomography system for imaging the human body and large organs. In addition, these devices would be useful in airport baggage X-ray systems, in flash X-ray (stop-action imaging), rapid scanning, portable radioisotope detection system for nuclear wasted process monitoring, and high background applications.

Spire建议为计算X射线的高级检测器阵列开发 单层层造影单层整合CDTE光电二极管 闪光灯。由于光电二极管/闪光灯的光损耗减少 接口和更好的光谱匹配与闪烁体排放 波长，该新检测器有望与X射线相比有所改善的信号 使用机械堆叠的硅晶体管光电二极管检测器。 此外，CDTE检测器的成本将大大降低 因为我们将使用低成本，薄膜，制造技术，并且将 通过消除需要精确堆叠的需要来降低组装复杂性 闪烁体上的光电二极管。 在第一阶段，我们演示了与 对常规SI光电二极管的性能提高。高灵敏度x- 射线探测器是通过（a）将玻璃胶粘剂粘合的cdte-photodiodes粘在a上的 CDWO4闪烁体，（b）直接在CDWO4上沉积CDTE光电二极管 通过热蒸发。在这两种情况下，CDTE光电二极管均表现出 与当前使用的SI相比，在500至800 nm范围内的响应率更高 光电二极管。这些光二极管制造的X射线探测器显示 比机械堆叠的Si光电二极管在 - 更好的性能 闪烁体X射线探测器。 推进其可行性已显示的单个元素技术 第一阶段到商业可行阵列的演示是目标 第二阶段的为了实现这一目标，探测器的性能将是 进一步提前，首先完善用于制造的过程 单元素探测器，然后将这些过程与 优化的设计以构建新的一类大大改进的探测器。 尖峰将产生单层集成的阵列 断层扫描，并与XCT制造商和用户紧密合作以确保 阵列满足他们的需求，并可以集成到他们的 产品。 拟议的商业应用：具有增强信号的X射线检测器， 低成本将在计算机断层扫描系统中找到用于成像的应用 人体和大型器官。此外，这些设备将是 在机场行李X射线系统中很有用，在Flash X射线中（停止进程） 成像），快速扫描，便携式放射性同位素检测系统 核浪费的过程监测和高背景应用。