Development and commercialisation of dual resist technologies for fabrication in compound semi-conductors

用于复合半导体制造的双抗蚀剂技术的开发和商业化

• 批准号: 72472
• 金额: $ 36.39万
• 依托单位: SCI-TRON LIMITED
• 依托单位国家: 英国
• 项目类别: Study
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=72472
• 关键词: Development; commercialisation; dual; resist; technologies

Use of III-V compound semiconductors (CS) in a range of applications including high speed/power electronics, lasers, power amplifiers for mobile phones, RF/microwave, space-tech and photonics is on rise due to their superior light receiving/emitting functionality, very high frequency signal generation capacity, at-least 100-times more power than their silicon counterparts, high-speed signal processing, low voltage operation and magnetic/heat sensitivity.CS patterning utilises following two major lithographic tools followed by an etch step (where the written pattern is transferred into the CS substrate):* Photolithography(PL)--widely used, working at 365, 248 and 193nm for production of Integrated circuits (ICs); shorter wavelengths are only available for largest manufacturers (e.g. Intel/Samsung/TSMC/Global Foundries) but a large industry depends on fabrication at 365nm.* Electron Beam Lithography(EBL)--used for key steps in electronics (e.g. mask-making) and more widely in smaller foundries to produce micro/nano-structuresIII-V CS hardness presents significant technical challenges to etch thin deep features at high resolution (<100nm) and to etch through multilayer structures required for high-end future applications such as micro Lasers/LEDs, nanoscale spectrometers, sensors and wireless communications.State-of-the-art solutions include positive (ZEP520A-chloroacrylate/styrene copolymer) and negative (HSQ-hydrogensilsesquixoane) tone solutions. ZEP520A gives an etch selectivity of 5:1\. which is insufficient to write deep thin structures, or to etch through multilayers of CS. HSQ can achieve etch-sensitivity of 7:1 but has drawbacks of requiring skilled chemist/lithographer, limited shelf-life due to degradation over time and damage to CS surface through adhesion.Building upon outputs of Innovate-UK project (\#104747) and our expertise in making Heterometallic-Ring-Complexes as building blocks, we have already developed a lab-scale manufacturing process with a throughput of 0.5litres/day of resists which can be used with silicon nanostructures (9nm wide and 330nm high).Driven by global end-user manufacturers' (Jet Propulsion Laboratory, CST, Microsemi, NASA, Ryan Briggs, Hughes Research Labs) demand of etching thin deep features at higher resolution and to be able to etch through multilayer structures; we can produce proof-of-principle quantities of (ca. 0.3litres) high-etch resists to be used with CS.This 18months industrial-research project aims to design and build a flexible manufacturing facility producing high-etch resists (capacity=50 litres/annum @ production cost of <£400/litre) to enable fabrication of thinner deeper structures and multilayer structures of differing CS in many fewer write-develop-etch steps.Project success will generate a catalogue of resists, made in small batches by Sci-Tron but all ready for contract manufacture. Sci-Resists will offer competitive advantages to all adopters and help growth of UK's vital high-tech sector.

在一系列应用中使用IIII-V化合物半导体（CS），包括高速/电力电子设备，激光器，手机的功率放大器，RF/Microwave，Space-Tech和Photonics的上升，由于其出色的光接收/发光/发射功能，非常高的频率信号能力，高频率的高速度/磁力较高，高速级别的高速公路，高速公路，高速公路，高速公路，高速公路，较高的型号，高速公路，高速公路，高速公路，乘坐高度较高的型号，乘坐高速级别，较高的型号，乘坐高度稳定器，并高达硅酸盐，并高达硅水平，并高速度，高速公路，高速公路，并高速度，并高达硅酸盐的高速公路，并高达频率。敏感性。CS模式使用了两个主要的光刻工具，然后是蚀刻步骤（其中书面模式转移到CS基板中）：*光刻（PL） - 广泛使用，在365、248和193nm工作，用于生产综合电路（ICS）； shorter wavelengths are only available for largest manufacturers (e.g. Intel/Samsung/TSMC/Global Foundries) but a large industry depends on fabrication at 365nm.* Electron Beam Lithography(EBL)--used for key steps in electronics (e.g. mask-making) and more widely in smaller foundries to produce micro/nano-structuresIII-V CS hardness presents significant technical challenges to etch高分辨率（<100nm）和通过高端未来应用所需的多层结构（例如微激光/LED，纳米级光谱仪，传感器和无线通信）所需的多层结构。 Zep520a的蚀刻选择性为5：1 \。这不足以编写深薄的结构或通过CS的多层蚀刻。 HSQ可以实现7：1的蚀刻敏感性，但缺点是需要熟练的化学家/石版画家，由于随着时间的流逝而降解而导致的保存寿命有限，并且通过粘合剂损坏了CS表面的损害。建立Innovate-UK Project的输出（\＃104477）以及我们在制造近距离的工程方面的专业知识，并且在建立了近距离的范围内，并逐步建立了一个范围的范围。 throughput of 0.5litres/day of resists which can be used with silicon nanostructures (9nm wide and 330nm high).Driven by global end-user manufacturers' (Jet Propulsion Laboratory, CST, Microsemi, NASA, Ryan Briggs, Hughes Research Labs) demand of etching thin deep features at higher resolution and to be able to etching through multilayer structures;我们可以生产最原始数量的（0.3litres）高级饲料可与C一起使用。这18个月的工业研究项目旨在设计和建立一个灵活的制造设施，以产生高蚀刻的高级抵抗者（50升量= 50升/年） @生产成本 @生产成本<£400/升的少量结构型结构，以少数几个较小的结构工具来制造，以较少的结构工具来制造较少的结构，这些工具是不同的结构工具。步骤。项目成功将产生一系列抗议目录，由Sci-tron小批量制造，但所有这些都准备好制造合同。 SCI-Resists将为所有采用者提供竞争优势，并帮助英国重要高科技领域的发展。