Novel Mid Infrared III-V Light Sources & Detectors enabling Autonomous Gas Sensors

新型中红外 III-V 光源

• 批准号: 102898
• 金额: $ 42.15万
• 依托单位: GAS SENSING SOLUTIONS LTD.
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=102898
• 关键词: Novel; Mid; Infrared; III; Light

This project addresses a rapid growth global market requirement, in many cases legislatively driven, for mass produced ultra-low power consumption gas sensors. The project will achieve a step change reduction in gas sensor power consumption through significant enhancement of current epitaxially grown compound semiconductor light source (light emitting diode [LED]) and photodiode detector (PD) performance. Enhanced performance would be achieved through development of novel mid infrared (MIR) edge emitting LED`s (EELED) and photodiode detector (PD`s) devices, utilising antimonide epi-grown bandgap structures. The project provides MIR EELED`S and PD`s tuned to specific gas absorption bands for use as the mid infrared light source and detector respectively in optical based gas sensors. Such ultra-low power consumption devices enable low cost “fit & forget” deployment of gas sensors specifically in smart wireless autonomous sensor networks. The consortium provides a manufacturing supply chain to implement new processes, light sources & detectors through to complete gas sensors. The project advances the Technology Readiness Level of EELED and PD capability to a late stage pre-commercial level, i.e. >TRL6.

该项目满足了快速增长的全球市场对大规模生产的超低功耗气体传感器的需求，在许多情况下是由立法驱动的。该项目将通过显着增强当前的外延生长化合物半导体光来实现气体传感器功耗的逐步降低。通过开发新型中红外 (MIR) 边缘发射 LED (EELED) 和光电二极管检测器 (PD) 器件，可以提高光源（发光二极管 [LED]）和光电二极管检测器 (PD) 的性能。该项目利用锑化物外延生长带隙结构提供针对特定气体吸收带的 MIR EELED 和 PD，分别用作基于光学的气体传感器中的中红外光源和探测器。该联盟提供了一个制造供应链，以实施新工艺、光源和探测器，直至完成气体传感器。和PD 能力达到后期商用前水平，即 >TRL6。