PMRAM: Initial chip design for a novel non-volatile low-power piezomagnetic random access memory to drive the future of IOT

PMRAM：新型非易失性低功耗压磁随机存取存储器的初始芯片设计，推动物联网的未来

• 批准号: 10033689
• 金额: $ 32.9万
• 依托单位: LOMARE TECHNOLOGIES LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=10033689
• 关键词: PMRAM; Initial; chip; design; novel

LoMaRe was founded in 2017 by four researchers to commercialise the properties of a novel class of material they discovered. Humanity is hitting the physical limitations of current computer storage and memory technologies, the basic foundations of which were designed in the 70ies. Serious hurdles in the further development of these technologies have started to appear in the late 2010s creating performance, cost and environmental(energy consumption) related issues.By using these novel materials, PMRAM allows for storage and manipulations of data combining high performance characteristics of DRAM with nonvolatility of NAND FLASH while maintaining a very low power envelope. In addition, PMRAM outperforms existing and competing emerging memory technologies in speed, density, energy-consumption, and value for money. These characteristics would allow to combine the performance of DRAM and nonvolatility of NAND FLASH into a future storage class memory(SCM) concept. This project will get PMRAM from TRL4 to TRL6\.

Lomare由四名研究人员于2017年成立，以商业化他们发现的新型材料的特性。人类正在遇到当前计算机存储和内存技术的物理局限性，其基本基础是在70年代设计的。这些技术进一步发展的严重障碍已在2010年代后期开始出现，创造了性能，成本和环境（能源消耗）相关的问题。通过使用这些新型材料，PMRAM允许对DRAM的高性能特征与NAND闪光灯的非挥发性相结合，同时保持非常低的功率信封。此外，PMRAM在速度，密度，能量消费和货币价值方面优于现有和竞争的新兴记忆技术。这些特征将允许将DRAM的性能和NAND Flash的不易作用结合到未来的存储类内存（SCM）概念中。该项目将使PMRAM从TRL4到TRL6 \。