Structure control of semiconductor hetero-ineterfaces utilizing 'hydrogen atom' as mediators

利用“氢原子”作为介体的半导体异质界面的结构控制

基本信息

批准号：
09305002
负责人：
SHIMIZU Isamu
金额：
$ 19.78万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

This work focused on the development of new technique to prepare high quality semiconductor materials with the assistance of hydrogen atoms. In our previous studies, it was confirmed that high flux hydrogen atoms generated by plasma affected on structure and property of semiconductors such as II-VI compound Zn(S,Se) and polycrystalline silicon.We made a VHF plasma CVD apparatus which had two deposition chambers connected with a gate-valve by way of an experiment to investigate the way to prepare high quality semiconductors and their hetero-interfaces. We confirmed that high quality, high crystallinity polycrystalline silicon (poly-Si) could be prepared on glass at temperatures lower than 400℃ by using SiFィイD24ィエD2 and HィイD22ィエD2 mixing gas. It should be noted that an interesting result was obtained : i.e., orientation structure of poly-Si were controlled by selecting appropriate SiFィイD24ィエD2/HィイD22ィエD2 gas ratio : i.e., (220) orietated poly-Si were grown at small SiFィイD24ィエD2/HィイD22ィエD … More 2 ratio conditions while (400) oriented poly-Si were grown at larger SiFィイD24ィエD2/HィイD22ィエD2 ratios. Especially, the preparation of (400) oriented poly-Si on glass at low temperatures < 400℃ has been very difficult subject until this study and they showed very excellent structural and transport properties. These features let us expect that the (400) oriented poly-Si are promising materials for high operation speed TFTs. Also it was confirmed that rather high crystal fraction (83%) poly-Si were prepared at rather low temperatures of >150℃ and very small addition of SiHィイD24ィエD2 to source gas effectively increased growth rate by promoting gaseous reaction in plasma.From the investigation for growth mechanism of these preferentially oriented poly-Si, we obtained detailed relationship between growth rate, film structure, SiFィイD24ィエD2/HィイD22ィエD2 ratio and growth temperature. It was found that very surface sensitive growth is occurred under the deposition condition Where (400) oriented poly-Si are grown : especially, deposition precursors have very strong selectivity for sticking to Si 100 surface. Also selective etching of specific crystallographic plane was observed at near this condition. These results indicate that (400) preferential growth is determined by the balance between selective sticking of precursors and selective etching of specific planes. Less

这项工作的重点是开发新技术，以在氢原子的帮助下制备高质量的半导体材料。在我们先前的研究中，已经证实，由血浆产生的高通量氢原子受到对半导体的结构和特性的影响，例如II-VI化合物Zn（S，SE）和多晶硅。我们使VHF血浆CVD cvd仪表符合两个沉积室，以良好的方式与登机口相关，以使他们的登机室良好的质量与登机口相关联，该方法是通过实验来准备的。异形。我们证实，通过使用SIFII D24E D2和H2E D2混合气体，可以在低于400℃的玻璃上在玻璃上制备高质量的高质量多晶硅（Poly-SI）。应该注意的是，获得了一个有趣的结果：即通过选择适当的SIFI D24E D2/HI D22E D2气比来控制Poly-SI的取向结构：即（220）Orietated poly-Si在小型SIFI D22/HI D22E d2 d2 d2 d2 d2 hi d2 fatio sif way（400 sif sif way poloy d ailde sif sif polot d ailde）中生长（400）。 D2/HI D22E D2比率。特别是，在低温下，在玻璃上的（400）个方向的多SI在这项研究之前一直是非常困难的主题，并且它们显示出非常出色的结构和运输特性。这些功能让我们期望（400）面向Poly-SI是高运行速度TFT的有希望的材料。另外，还可以证实，在> 150英尺的低温下制备了相当高的晶体分数（83％）多si，并且很小的添加sihiy d24iy d2在血浆中促进气态反应有效地提高了生长速率，从而促进了这些更优选的多个deci的生长速率，我们获得了生长的生长，从D22/HIFI D22比和生长温度。已经发现，在（400）面向多个SI的沉积条件下，表面敏感的生长发生非常敏感：尤其是，沉积前体具有非常强的选择性，可以坚持使用Si 100表面。在此条件附近，也观察到特定晶体学平面的选择性蚀刻。这些结果表明（400）优先增长取决于前体的选择性粘附和特定平面的选择性蚀刻之间的平衡。较少的