CONTROL OF FREE RADICALS FOR CONSTRUCTION OF MESOSCOPIC STRUCTURES OF MATERIALS

控制自由基以构建材料的介观结构

基本信息

批准号：
05237102
负责人：
SHIMIZU Isamu
金额：
$ 50.05万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research on Priority Areas
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1995
项目状态：
已结题

项目摘要

The real time control of the mososcopic structures of semiconductors was made by means of free radicals under the in situ observation with spectroscopic ellipsometry, STM (AFM) in an aqueous solution, FTIR-ATR,etc.Followings are the outstanding findings resulted in : (1) High quality hydrogenated amorphous silicon with the gaps from 1.55eV to 2.10eV was fabricated by controlling the medium range structures with the aid of free radicals during the growth, so called "Chemical Annealing". (2) High quality polycrystalline silicon thin films were grown on glass substrate under control of the surface reaction under the in situ observation with spectroscopic ellipsometry. (3) Novel technique termed the high fluidity CVD was developed by controlling surface reaction of free radicals under the observation with FTIR-ATR for making fine patterns on Si wafer. (4) A diagnostic study was carried out on the free radicals generated in plasma for the aim of making high quality amorphous silicon. Consequently, a-Si : H films showing high carriers mobility were achieved by the precise control of ions impinging on the growing surface. (5) The mechanism in atomic scale was revealed for the chemical etching of Si (111), (001) with HF or NH4F solution under the real time observation with STM (AFM) under controlling the electrochemical potentials. (6) Silicon nanocrystalline particles were fabricated by controlling hydrogen plasma and were manipulated with a AFM.Some quanmsize effets such as a single electron tunneling and the emission of visible light were practically observed in the particles.

半导体的马蹄形结构的实时控制是通过自由基在原位观察下进行的，具有光谱椭圆法，STM（AFM），在水溶液中，ftir-atr等。ftir-atr等等等等等。根据：（1）在：（1）在以下方面的杰出发现，在：（1）由高质量的氢化级别造成的介导的米型硅含量。在生长过程中自由基的帮助，所谓的“化学退火”。（2）高质量的多晶硅薄膜在玻璃底物上生长，并以光谱椭圆法控制在原位观察下的表面反应。（3）称为高流动性CVD的新技术是通过控制自由基在观察结果下用FTIR-ATR的表面反应来开发的，以在Si晶圆上制作精细的模式。（4）在血浆中产生的自由基上进行了诊断研究，目的是制造高质量的无定形硅。因此，通过撞击生长表面的离子的精确控制，可以实现显示高载体迁移率的A-SI：H膜。（5）在控制电化学电位的STM（AFM）的实时观察下，在实时观察下，在SI（111），（111），（001）的化学蚀刻（111），（001）的化学蚀刻机理中，原子量表中的机制。（6）通过控制氢等离子体来制造硅纳米晶颗粒，并用AFM进行操纵。在颗粒中实际上观察到了一些Quanmsize Expets，例如单个电子隧穿，可见光的发射。