The preparation of high quality polycrystalline Si films at low temperature using PECVD.

利用PECVD低温制备高质量多晶硅薄膜。

基本信息

批准号：
09450124
负责人：
HASEGAWA Seiichi
金额：
$ 8.32万
依托单位：
Kanazawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

The subject of this research is the preparation of highly crystallized polycrystalline Si films at low temperature using a plasma-enhanced chemical vapor deposition (PECVD) system, by utilizing effects of etching on the growing surface of films and those of a change in the surface morphology of substrates. In the present work, we investigated the changes in the crystalline qualily as follows : Effects of SiFィイD24ィエD2 addition to a SiHィイD24ィエD2 feed gas. (2) Effects of HィイD22ィエD2 addition in addition to SiFィイD24ィエD2 in (1), (3) effects of a change in deposition temperature. And (4) effects of plasma-pretreatment on substrates prior to the deposition of Si films under fixed conditions. As a result, (1) the SiFィイD24ィエD2 addition enhances the crystallization of films deposited at a low temperature, but high flow-rate conditions of SiFィイD24ィエD2 caused an increase in the density of O atoms incorporated in the Si films after deposition. (2) The addition of HィイD22ィエD2 in addition to SiFィイD24ィエD2 under low temperature conditions further enhanced the crystallinity, but decreased the size of crystal grains. Furthermore, the HィイD22ィエD2 addition acted to suppress the incorporation of O atoms after deposition as stated in the above item (1). (3) The crystal quality of Si films strongly depended on the deposition temperature, Td : Under conditions of Td < 150 ℃ and Td * 650 ℃, the crystallization of the Si films was suppressed and the film structure was amorphous. (4) When Si films were deposited on substrates subjected to pretreatment of plasma using CFィイD24ィエD2, NィイD22ィエD2, and/or HィイD22ィエD2, the crystallinity of the Si films was enhanced. Such enhanced crystallinity was connected with preparation of substrates with a proper degree of surface roughness. Thus, the addition of SiFィイD24ィエD2 and HィイD22ィエD2 to a SiHィイD24ィエD2 feed gas and the plasma pretreatment of substrates are useful technologies for fabricating highly crystallized polycrystalline Si films at low temperature.

使用Aplasma增强的化学蒸气沉积（PECVD）系统在温度下制备高度结晶的SI膜的主题，是通过利用蚀刻对膜不断增长的效果的影响结晶如下：SIFI D24 A D24 AD24 B D24 YIE D2进食气体（2）H d22 YIE D2的效果（除SIFI D24 YIE D2）之前（1）固定条件。 Yier D24 Yi rther增强了结晶度，但晶体的尺寸降低了。 TD：在TD <150°C和TD * 650°C的条件下，SI膜被抑制，并且使用CF Lee D24 Yier D2，Nii D22，和/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或/或抑制了膜结构。 HI D2，SI膜的结晶度具有适当的表面粗糙度。饲料气和底物的血浆预处理是在低温下制造高度结晶的多晶Si膜的有用技术。