Study on Spin-Polarized Light-Emitting Diodes using Ferromagnetic/Semiconducting Nanowire Hybrids on Si Substrate

硅衬底上铁磁/半导体纳米线混合体自旋偏振发光二极管的研究

• 批准号: 23360129
• 负责人: HARA Shinjiro
• 金额: $ 12.56万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360129/
• 关键词: 半導体ナノワイヤ; 強磁性体ナノ構造; 選択成長; スピン偏極発光素子; ボトムアップ形成; 複合ナノ構造; 半導体ナノテクノロジ; スピントロニクス

We realized vertical free-standing semiconducting nanowires (NW) hybridized with ferromagnetic MnAs nanoclusters (NC), which enables us to confine carriers one-dimensionally and control carrier spins, by utilizing our unique selective-area growth method. The dependences of MnAs NC formation on various NW templates were investigated. We observed that MnAs layers were grown on the top {111}B surface of InAs NWs with a diameter of about 80 nm, and into the host NWs from the side walls to form MnAs/InAs hetero-junctions, which enable us to realize spin-carrier injection to NWs, and in which most of the c-axes of hexagonal NiAs-type MnAs layers were approximately parallel to the <111>B directions of InAs NWs. We developed two-terminal device processes to realize spin-polarized light-emitting diodes. I-V characteristics of the prototype MnAs/GaAs hybrid NWs showed p-type conductivity possibly owing to thermal diffusion of Mn atoms into the host GaAs NW surfaces during the MnAs NC formation.

我们实现了与铁磁 MnAs 纳米团簇 (NC) 杂化的垂直独立式半导体纳米线 (NW)，这使我们能够利用我们独特的选择性区域生长方法一维限制载流子并控制载流子自旋。研究了 MnAs NC 形成对各种 NW 模板的依赖性。我们观察到，MnAs 层生长在直径约为 80 nm 的 InAs 纳米线的顶部 {111}B 表面上，并从侧壁进入主体纳米线中，形成 MnAs/InAs 异质结，这使我们能够实现自旋-载流子注入到NWs，并且其中六方NiAs型MnAs层的大部分c轴近似平行于InAs NWs的<111>B方向。我们开发了两端器件工艺来实现自旋偏振发光二极管。原型 MnAs/GaAs 混合纳米线的 I-V 特性显示出 p 型导电性，这可能是由于 MnAs NC 形成过程中 Mn 原子热扩散到主体 GaAs 纳米线表面所致。

项目成果

Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters (Invited Paper)

自下而上形成与铁磁纳米团簇杂化的垂直自支撑半导体纳米线（特邀论文）

• 作者: Shinjiro Hara

Fabrication and Structural Characterization of Vertical Free-Standing InAs Nanowires Hybridized with Ferromagnetic MnAs Nanoclusters

铁磁 MnAs 纳米团簇杂化垂直独立式 InAs 纳米线的制备及结构表征

• 作者: Hiromu Fujimagari

Selective-Area Growth of MnAs Nanoclusters for New Planar Magnetoelectronic Devices

用于新型平面磁电子器件的 MnAs 纳米团簇的选择性区域生长

• 作者: Martin Fischer

"III-V Semiconductor Nanowire Light Emitting Diodes and Lasers", Chapter 8, "Advances in III-V Semiconductor Nanowires and Nanodevices", Bentham eBooks, eISBN: 978-1-60805-052-9

“III-V 半导体纳米线发光二极管和激光器”，第 8 章，“III-V 半导体纳米线和纳米器件的进展”，Bentham 电子书，eISBN：978-1-60805-052-9

• 发表时间: 2011
• 作者: Junichi Motohisa

Magnetotransport Measurements on Individual MnAs Nanoclusters and Nanocluster Arrangements

单个 MnAs 纳米团簇和纳米团簇排列的磁输运测量

• 作者: Martin Fischer