Fabrication of Si/InGaN hybrid solar cells

Si/InGaN混合太阳能电池的制造

• 批准号: 24760032
• 负责人: SANG Liwen
• 金额: $ 2.08万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24760032/
• 关键词: 薄膜; solar cell; Si; InGaN; 太陽電池; 異種材料

P-Si/InGaN heterojunction structures are proposed to fabricate solar cells to achieve both the current match and overcome the difficulty of p-type doping in In-rich InGaN. This structure can extend the optical absorption to the full solar spectrum by adjusting the In composition in InGaN and/or doping in the p-Si. We have successfully deposit amorphous Si on p-type InGaN by PECVD deposition to fabricate heterojunctions. The heterojunction indicated very good characteristics, showing the p-n junction behavior. The photovoltaic properties are achieved. InGaN quantum dots structures are also successfully achieved to realize long-wavelength absorption.

提出P-Si/InGaN异质结结构来制造太阳能电池，以实现电流匹配并克服富InGaN中p型掺杂的困难。通过调整 InGaN 中的 In 成分和/或 p-Si 中的掺杂，该结构可以将光吸收扩展到整个太阳光谱。我们已经通过PECVD沉积成功在p型InGaN上沉积非晶硅以制造异质结。异质结表现出非常好的特性，显示出 p-n 结行为。实现了光伏特性。 InGaN量子点结构也成功实现了长波长吸收。

项目成果

Photoelectrical energy-conversion devices based on III-Nitride semiconductors

基于III族氮化物半导体的光电能量转换器件

• 发表时间: 2012
• 作者: Manabu Ohtomo;Yoshihiro Matsumoto;Shiro Entani;Pavel V. Avramov;Hiroshi Naramoto;Kenta Amemiya and Seiji Sakai;Liwen Sang;瀬波大土，立花明知;大野誠吾,新宮正彦,黒澤裕之,森竹勇斗,日下寛太,中山和之,石原照也;Liwen Sang
• 通讯作者: Liwen Sang

III-Nitride semiconductors for high-efficiency energy conversion devices

用于高效能量转换器件的 III 族氮化物半导体

• 发表时间: 2013
• 作者: 田中 友貴;高田 崇二郎;瀬波 大土;立花 明知;Liwen Sang
• 通讯作者: Liwen Sang

Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation

• DOI: 10.1002/pssa.201200716
• 发表时间: 2013-03-01
• 期刊: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
• 影响因子: 2
• 作者: Lozac'h, Mickael;Nakano, Yoshitaka;Sumiya, Masatomo
• 通讯作者: Sumiya, Masatomo

InGaN-based p-n junction solar cells

InGaN基p-n结太阳能电池

• 发表时间: 2012
• 作者: Shoichiro Nakao;Yasushi Hirose;Tomoteru Fukumura;and Tetsuya Hasegawa;Liwen Sang
• 通讯作者: Liwen Sang

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

• DOI: 10.1063/1.4770059
• 发表时间: 2012-12-03
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Cheng, Shaoheng;Sang, Liwen;Koide, Yasuo
• 通讯作者: Koide, Yasuo