Nonvolatile optical memory with spin vertical-cavity surface emittinglasers

具有自旋垂直腔表面发射激光器的非易失性光学存储器

• 批准号: 23656051
• 负责人: IKEDA Kazuhiro
• 金额: $ 2.58万
• 依托单位: Nara Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656051/
• 关键词: 光情報処理; 光エレクトロニクス; 光制御; スピンVCSEL; スピンフォトニクス; 半導体光デバイス; 光情報処理; 光エレクトロニクス; 光制御; スピンVCSEL; スピンフォトニクス; 半導体光デバイス

Our nonvolatile optical memory utilizes a vertical-cavity surface-emitting laser (VCSEL) grown on GaAs(110) substrate which has a long electron spin relaxation time. The readout is done by circularly polarized lasing with electrical spin injection. As the first step, we tried to demonstrate lasing under spin unpolarized current injection using a paramagnetic contact. However, it was found that the improvement of the VCSEL structure is necessary. An oxidized current confinement structure for reduction of threshold current, and a structure for current injection at a layer under the upper DBR with a lower crystal quality were investigated, and their fabrication processes have been established.

我们的非易失性光学记忆利用在GAAS（110）底物上生长的垂直腔表面发射激光（VCSEL），该底物具有很长的电子自旋松弛时间。读数是通过用电旋转注射的圆极化激光来完成的。作为第一步，我们试图使用顺磁接触在旋转非极化电流注入下进行激光。但是，发现有必要改善VCSEL结构。研究了阈值电流的氧化电流限制结构，并研究了晶体质量较低的上层DBR下层的电流注入结构，并建立了它们的制造过程。