Science of THz light source based on longitudinal phonon-plasmon coupled mode in nitride materials

氮化物材料中基于纵向声子-等离子体耦合模式的太赫兹光源科学

• 批准号: 23656010
• 负责人: ISHITANI Yoshihiro
• 金额: $ 2.5万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656010/
• 关键词: 赤外光; THz; 量子干渉; LOフォノン; 界面分極; フォノン; 半導体; テラヘルツ波; フォノンポラリトン; 界面モード; 半導体薄膜; テラヘルツ; 電気双極子モーメント; 窒化物半導体; ＬＯフォノン; プラズモン

The purpose of this research is the proposal of the principle and structure of THz light source with the frequency of less than 30 THz. It was found that absorption of p-polarized light by GaN and AlN thin films with the thickness less than a wavelength was detected. Also s-polarized light was absorbed in the stripe-shaped mesa structure with the width of less than a wavelength. Fano-type quantum interference was observed for the system of two LO phonon modes vibrating in the same plane and one continuum of inter-valence band transition in p-GaInP films. These results suggest the possibility of the coherent THz light emission by LO phonon system based on electromagnetic induced transparency.

本研究的目的是提出频率小于30 THz的太赫兹光源的原理和结构。发现厚度小于一个波长的GaN和AlN薄膜对p偏振光的吸收。宽度小于波长的条形台面结构也吸收了s偏振光。在 p-GaInP 薄膜中，在同一平面振动的两个 LO 声子模式和一个价带间跃迁连续体的系统中观察到 Fano 型量子干涉。这些结果表明基于电磁感应透明的LO声子系统相干太赫兹光发射的可能性。

项目成果

Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode energy: An example of GaN

• DOI: 10.1063/1.4754555
• 发表时间: 2012-09
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Y. Ishitani

InNの正孔散乱過程

InN空穴散射过程

• 发表时间: 2011
• 作者: 石谷善博;他
• 通讯作者: 他

窒化物エピタキシャル層評価における中赤外域表面・界面モードの利用

利用中红外表面/界面模式评估氮化物外延层

• 发表时间: 2012
• 作者: 増田祥太郎;他
• 通讯作者: 他

Carrier recombination dynamics of III-nitrides based on infrared spectroscopy

基于红外光谱的III族氮化物载流子复合动力学

• 发表时间: 2014
• 作者: Y. Masumoto;K. Goto;S. Tomimoto;P. Mohan;J. Motohisa;T. Fukui;Y.Ishitani and D.Imai
• 通讯作者: Y.Ishitani and D.Imai

Carrier scattering processes in p and n type InN fims by infrared spectroscopy

通过红外光谱分析 p 型和 n 型 InN 薄膜中的载流子散射过程

• 发表时间: 2012
• 作者: M.Fujiwara;Y .Ishitani;X.Q.Wang;D.Imai;K.Kusakabe;and A.Y oshikawa
• 通讯作者: and A.Y oshikawa