Study on carrier transport processes in InN by the developing of sensing method of mobility depth profile by infrared spectroscopy

红外光谱迁移率深度剖面传感方法研究InN中载流子输运过程

• 批准号: 20560005
• 负责人: ISHITANI Yoshihiro
• 金额: $ 2.5万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560005/
• 关键词: 結晶評価; 窒化インジウム; 赤外光物性; 電子素子; 赤外分光; 高周波電子デバイス; 電子移動度; 散乱異方性; 2次元電子ガス; プラズモン・LOフォノン結合モード; 正孔物性; カソードルミネッセンス; 正孔移動度

InN has a nitride material with the peculiarly small energy bandgap of 0.63 eV, and is expected to be applied to high frequency electronic devices. We have overcome the difficulty in physical analysis stemming from the electron accumulation layers around the surface and interface with the substrates. It is found that the mobility of electrons of inside regions is nearly 5000cm^2/Vs. The edge-type dislocations are one of the main scattering centers of electrons and holes, in addition for holes, Mg or related complexes are also competitive scattering centers. For InN/InGaN heterostructure, the electrons localized around the interface has the density of the order of 10^<13> cm^<-3>, and has mobility as small as that of InGaN because of the electron wavefunction penetration to the InGaN layer, which indicates the necessity of the improvement of the crystal quality of InGaN alloys.

Inn具有硝酸盐材料，其特殊的小能带隙为0.63 eV，预计将应用于高频电子设备。我们已经克服了来自表面周围的电子积累层以及与底物界面的难度。发现内部区域的电子的迁移率接近5000cm^2/vs。边缘型位错是电子和孔的主要散射中心之一，除了孔，MG或相关的配合物，也是竞争性的散射中心。对于Inn/Ingan异质结构，围绕界面周围的电子的密度为10^<13> cm^<-3>，并且由于对Ingan层的电子波触发渗透，其迁移率与Ingan的迁移率与Ingan的密度小，这表明了Ingan Alloys晶体质量改善的必要性。

项目成果

Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region

• DOI: 10.1063/1.2875918
• 发表时间: 2008-03
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Y. Ishitani;Xiaodong Wang;S. Che;A. Yoshikawa

Carrier recombination processes in Mg-doped N-polar InN films

掺镁 N 极性 InN 薄膜中的载流子复合过程

• DOI: 10.1002/pssb.201100496
• 发表时间: 2012
• 期刊: physica status solidi (b)
• 作者: Daichi Imai;et al.
• 通讯作者: et al.

p型n型InNの非輻射電子・正孔再結合過程

p型n型InN中的非辐射电子/空穴复合过程

• 发表时间: 2010
• 作者: 石谷善博;今井大地;草部秀一;吉川明彦
• 通讯作者: 吉川明彦

imultaneous extraction of p-type carrier density and mobility in InN layers by infrared reflectance measurements

通过红外反射测量同时提取 InN 层中的 p 型载流子密度和迁移率

• 发表时间: 2008
• 作者: M.Fujiwara;Y.Ishitani;X.Wang;S.B.Che;A.Yoshikawa
• 通讯作者: A.Yoshikawa

Hole mobility in Mg-doped p-type InN films

• DOI: 10.1063/1.2906374
• 发表时间: 2008-03-31
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Wang, Xinqiang;Che, Song-Bek;Yoshikawa, Akihiko
• 通讯作者: Yoshikawa, Akihiko