Superconductivity of Heavily Boron-Doped Diamond and Ultrananocrystalline Diamond.

重掺硼金刚石和超纳米晶金刚石的超导性。

• 批准号: 21760239
• 负责人: HARA Takeshi
• 金额: $ 2.91万
• 依托单位: Ariake National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760239/
• 关键词: 超伝導; 超ナノ微結晶ダイヤモンド; ダイヤモンド; レーザーアブレーション; 同軸型アークプラズマ蒸着法; アークプラズマ蒸着法

The purpose of this study is to investigate the possibility as superconductive materials of boron doped ultrananocrystalline diamond (UNCD) thin films. The electrical conductivity of the boron doped UNCD was measured at the range of from 500K to 3.6K. We confirmed that the electrical conductivity of UNCD increased with the amount of doped boron, and the value was not possible to measure at the temperature of below 110K because of flaking of the ohmic electrode on the film surface of the boron doped UNCD. The adhesion strength of between the ohmic electrode and the boron doped UNCD thin films might be different depending on the value of measurement temperature. It is necessary to search for the electrode material that has high adhesion to film surface of boron doped UNCD. Through the solution of this problem, we estimate that the superconductive property of boron doped UNCD became apparent. We continue this study.

本研究的目的是研究掺硼超纳米晶金刚石（UNCD）薄膜作为超导材料的可能性。在500K至3.6K的范围内测量了掺硼UNCD的电导率。我们证实UNCD的电导率随着硼掺杂量的增加而增加，并且由于硼掺杂UNCD薄膜表面的欧姆电极剥落，在低于110K的温度下无法测量该值。欧姆电极和硼掺杂UNCD薄膜之间的粘附强度可能根据测量温度的值而不同。有必要寻找对硼掺杂UNCD薄膜表面具有高附着力的电极材料。通过这个问题的解决，我们估计掺硼UNCD的超导特性会变得明显。我们继续这项研究。

项目成果

Electrical Properties of Boron Doped p-Type Ultrana nocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films

掺硼p型超微晶金刚石/氢化非晶碳复合薄膜的电学性能

• 发表时间: 2009
• 作者: S.Ohmagari;T.Yoshitake;Akira Nagano;S.AL-Riyami;R.Ohtani;H.Setoyama;E.Kobayashi;T.Hara;K.Nagayama
• 通讯作者: K.Nagayama

Electrical Properties of Boron Doped p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films

硼掺杂p型超纳米晶金刚石/氢化非晶碳复合薄膜的电学性能

• 发表时间: 2009
• 作者: S.Ohmagari;T.Yoshitake;Akira Nagano;S.AL-Riyami;R.Ohtani;H.Setoyama;E.Kobayashi;T.Hara;K.Nagayama
• 通讯作者: K.Nagayama