STUDIES ON STEP BEHAVIOR ON Si(110)SURFACE AND ITS APPLICATION TO SELF-ORGANIZED FORMATION OF GRAPHENE NANO-RIBBON

Si(110)表面阶梯行为研究及其在石墨烯纳米带自组织形成中的应用

• 批准号: 21360017
• 负责人: SUEMITSU Maki
• 金额: $ 12.56万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360017/
• 关键词: グラフェン; エピタキシャルグラフェン; ステップ; 表面微細加工; 表面終端; 電子物性; 半導体; 金属; ナノリボン

We have studied in detail the impacts of surface microstructures of substrates on the quality and the electronic structure of the epitaxial graphene (EG)formed on them. As a result, we established a method to control the surface steps on Si and SiC substrates, and succeeded in the betterment of EG quality and in controlling the Si-and C-termination of 3C-SiC(111)surfaces. Moreover, it was found that EGs on Si-terminated and C-terminated SiC(111)surfaces show semiconducting and metallic properties, respectively. This finding surely provides a novel method to control the graphene electronic properties, which can be applied to fabrication of graphene devices.

我们详细研究了基底表面微结构对其上形成的外延石墨烯（EG）的质量和电子结构的影响。结果，我们建立了一种控制Si和SiC衬底上表面台阶的方法，并成功地提高了EG质量并控制了3C-SiC(111)表面的Si端和C端。此外，还发现Si端SiC(111)表面和C端SiC(111)表面上的EG分别表现出半导体和金属特性。这一发现无疑提供了一种控制石墨烯电子特性的新方法，可应用于石墨烯器件的制造。

项目成果

Tunable electronic structure of epitaxial graphene formed on silicon substrates

硅衬底上形成的外延石墨烯的可调谐电子结构

• 发表时间: 2011
• 作者: Maki Suemitsu;and Hirokazu Fukidome
• 通讯作者: and Hirokazu Fukidome

Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission

Si 2p核级光电子研究硅热氧化及其热脱附

• 发表时间: 2010
• 期刊: Journal of Physics : Conference Series
• 作者: Y. Enta;H. Nakazawa;S. Sato;H. Kato;and Y. Sakisaka
• 通讯作者: and Y. Sakisaka

Epitaxial Growth Processes of Graphene on Silicon Substrates

• DOI: 10.1143/jjap.49.01ah03
• 发表时间: 2010-01-01
• 期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
• 影响因子: 1.5
• 作者: Fukidome, Hirokazu;Miyamoto, Yu;Suemitsu, Maki
• 通讯作者: Suemitsu, Maki

Nanoscale Control of Structure of Epitaxial Graphene by Using Substrate Microfabrication

利用基底微加工对外延石墨烯结构进行纳米级控制

• 发表时间: 2010
• 作者: Hirokazu Fukidome;Masato Kotsugi;Yusuke Kawai;Takuo Ohkouchi;Thomas Seyller;Karsten Horn;Hiroyuki Handa;Ryota Takahashi;Kei Imaizumi;Yoshiharu Enta;Maki Suemitsu;Toyohiko Kinoshita;Yoshio Watanabe
• 通讯作者: Yoshio Watanabe

Temperature-Programmed Desorption Observation of Graphene-on-ilicon Process

硅基石墨烯过程的程序升温解吸观察

• DOI: 10.1143/jjap.50.070102
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Shunsuke Abe;Hiroyuki Handa;Ryota Takahashi;Kei Imaizumi;Hirokazu Fukidome;Maki Suemitsu
• 通讯作者: Maki Suemitsu